TRANSISTOR 1047 VOLTAGE RATING Search Results

transistor 1548 b

Abstract: transistor 1548 transistor D 1047
Contextual Info: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

Contextual Info: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO

Contextual Info: MMBTA92LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Symbol MMBTA92 Unit Collector −Emitter Voltage Rating

Contextual Info: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )

Contextual Info: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.

transistor 1047 BL 1

Contextual Info: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: V Q 20 06 tìi Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ R d S<ON Order Number / Package ' ckon ) b v dgs max) (min) Quad Ceramic DIP* -90V 5.Oil -1.0A VQ2006P * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology

Contextual Info: h 7 > y X $ / T ransistors FMW6 FMW6 NPN '><J = l> h 7 > ' s Z $ iS J l l# lliffl/R F Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor vfiilS l/D im e n sio n s Unit : mm Str >4 V ;V v4i ~ r • 1) ^ — >'f — 5— T — JUK ) "j *t — v T '

Q62702-F1359

Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
Contextual Info: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!

8060 transistor

Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
Contextual Info: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —

inverter NE5561

Abstract: NE5561 LCC package 0889 SE5561FE NE556-1 12v DC led liting circuits pulse width modulator for smps SE556 NE5561D NE5561N
Contextual Info: Product specification P hilips Sem iconductors Linear Products Switched-mode power supply control circuit NE/SE5561 PIN CONFIGURATION DESCRIPTION The NE5561 /SE5561 is a control circuit for use In switched-mode power supplies. It contains an internal temperature- compensated

si1029x

Contextual Info: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V

LB1615

Abstract: 3037A sanyo motor 3 phase sanyo 3 phase motor
Contextual Info: SANYO SEMICONDUCTOR CORP 15E D g 7 CH 7 Q7 L> 0 Q0 B B 44 b LB1615 3037A ; • M o n o lit h ic D ig ita l IC 3-Phase DD Motor Driver 1811A The LB1615 is a 3-phase DD motor driver IC ideally suited for use in VTR capstan motor drive, drum motor drive, reel motor drive, and floppy disk motor drive

power divider zaps a

Abstract: power divider zaps i sot97de 1000H TDA1312A TDA1312AT
Contextual Info: Philips S em iconductors Prelim inary specification Stereo continuous calibration DAC CC-DAC TDA1312A; TDA1312AT FEATURES GENERAL DESCRIPTION • 8 x oversampling (simultaneous input) possible The TDA1312A; 1312AT is a voltage driven D/A converter and is a device of a new generation of

VQ1000

Abstract: vq1000n6
Contextual Info: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / Order Num ber / Package b v dgs ^DS ON (max) ^D(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Q 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceram ic DIP Advanced DMOS Technology

Contextual Info: m HARRIS HFA1212/883 S E M I C O N D U C T O R Dual, High Speed, Low Power, Video Closed Loop Buffer PRELIMINARY June 1994 Description Features This Circuit Is Processed In Accordance to MIL-STD883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1.

line follower sensor

Abstract: QUANTUM CAPACITIVE TRANSISTOR BC 157 high frequency linear cmos IMAGE SENSOR ccd image sensor 1024H 850C 860C BAT74 FT18
Contextual Info: IMAGE SENSORS FT 18 Frame Transfer CCD Image Sensor Product specification File under Image Sensors Philips Semiconductors 2000 January 7 TRAD Philips Semiconductors Product specification Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V

Contextual Info: EMC1046/EMC1047 1°C Multiple Temperature Sensor with Beta Compensation and Hottest of Thermal Zones PRODUCT FEATURES Datasheet General Description Features The EMC1046/EMC1047are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error

431 diode

Abstract: diode b6 k 450 EMC1046 EMC1047 MSOP-10
Contextual Info: EMC1046/EMC1047 1°C Multiple Temperature Sensor with Beta Compensation and Hottest of Thermal Zones PRODUCT FEATURES Datasheet General Description Features The EMC1046/EMC1047are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error

431 diode

Contextual Info: EMC1046/EMC1047 1°C Multiple Temperature Sensor with Beta Compensation and Hottest of Thermal Zones PRODUCT FEATURES Datasheet General Description Features The EMC1046/EMC1047 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error

transistor 1346

Abstract: 1024KX8 28F400 272818 intel 282 292130 SmartDie 29053
Contextual Info: PRELIMINARY 28F400BVC 4-MBIT 256Kx16, 512Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification • Intel SmartVoltage Technology ■ ■ ■ ■ ■ ■ Software EEPROM Emulation with — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation

Contextual Info: y UC1517 UC3517 UNITRODE Stepper Motor Drive Circuit DESCRIPTION FEATURES • Complete Motor Driver and Encoder The UC3517 contains four NPN drivers that operate in two-phase fashion for full-step and half-step motor control. The UC3517 also Continuous Drive Capability 350mA per Phase

probe wafer

Abstract: SmartDie 1346 transistor 1346
Contextual Info: PRELIMINARY 28F400BVC 4-MBIT 256Kx16, 512Kx8 SmartVoltage Boot Block Flash Memory Family SmartDie Product Specification M Intel SmartVoltage Technology • ■ ■ ■ ■ — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60%