TRANSISTOR 1052 Search Results

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BUF636A

Contextual Info: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

BUF630

Abstract: transistor BUF630
Contextual Info: BUF630 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

BUF630

Contextual Info: BUF630 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature

BUF636A

Abstract: buf636
Contextual Info: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature

BUF636A

Abstract: 5V rectifier ic
Contextual Info: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

BUF630

Contextual Info: BUF630 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

DIN 1 10504

Abstract: BUF630
Contextual Info: BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

BUF636A

Contextual Info: BUF636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

BLX98

Abstract: philips carbon film resistor carbon resistor WE VQE 24 E 2222 311 capacitor philips WE VQE 11 E RF NPN POWER TRANSISTOR C 10-50 GHZ 4322 057
Contextual Info: bSE D 7 1 1 0 0 2 b D 0 b 3 5 S S TT3 • P H I N PH IL IP S BLX98 INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers o f television transposers and transmitters in band IV-V.

multi-emitter transistor

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> • bbSB'ni QDS^bSl TTH « A P X II BLX96 M A IN T E N A N C E T Y P E U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.

K1118

Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Contextual Info: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier

SILICON PNP POWER TRANSISTOR b 869

Abstract: S869T Sot-23R S869TR
Contextual Info: Tem ic S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features • High blocking voltages • Transition frequency: f j = 1 GHz 95 10527 S869T Marking: 869T Plastic case SOT 23

a1270* transistor

Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

a1270* transistor

Abstract: 1689c hp plotter
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

BF569

Abstract: BF569R
Contextual Info: BF 569 / BF 569 R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 2 94 9280 BF569 Marking Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 95 10527 BF569R Marking Plastic case (SOT 23R)

mfw transistor

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D m {^ 7 2 5 1 * 00=10527 2 MOTOROLA SEM ICO NDUCTOR. .- . TECHNICAL DATA 'T - V S - iS 1 lt> mfw DM0 PRELIMINARY DATA MRH280NHXV, MRH280NHS PRO C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR