TRANSISTOR 115 25E Search Results

CBIC-U

Abstract: SCR GTO 100 amp 1000 volt GTO IGBT DRIVER Analog Devices IGBT PNP
Contextual Info: A T & T MELEC I C 25E D • 005002b 0002575 2 ■ AT&T’S CUSTOM DESIGN CAPABILITIES: BCDMOS AND CBIC Q Using our latest technologies, custom designed integrated circuits can be created to meet the criteria of your most complex applications. As opposed to off-the-shelf devices, AT&T custom circuits offer several inherent advantages,

b0746

Abstract: B0746C 746C BD7468 B0746A
Contextual Info: BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK_ • AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with the BD745 Series s o t -93 p a c k a g e TOP VIEW • 20 A Continuous Collector Current

2SC2340

Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

Contextual Info: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: Micmsemi • m m RF Products m Progress Powered by Technology 140 COM M ERCE DRIVE M ONTG OM ERYV ILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor

BUK442

Abstract: BUK442-60A BUK442-60B
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • btSBTBl 002033S T ■ PowerMOS transistor BUK442-60A BUK442-60B T~ 37-09 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.

14n 431K varistor

Abstract: 431k varistor
Contextual Info: 14M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 82V to 1200V.

Contextual Info: TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV Intergrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS product Wide operating voltage V1mA range from 82V to 1200V.

Contextual Info: SANYO SEMI CONDUCTOR FC115 CORP SEE D ? c\c\7Q7h 00Q7 3 0 Ô S T - 3P # -1 3 P N P Epitaxial P la n a r S ilic o n C o m p o s it e T ra n s is to r 2066 i Switching Applications £3083 . I - . with Bias Resistances R1=10ki2, R2=10k£2

Contextual Info: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.

Contextual Info: TMOV SERIES DATA SHEET ZINC OXIDE VARISTOR – TMOV SERIES FEATURE — TMOV Intergrated thermal protection device — High peak surge current rating up to 18KA — Designed to facilitate compliance to UL1449 for TVSS product — Wide operating voltage V1mA range from 82V to 1800V.

KA-40W

Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
Contextual Info: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity

ZTX1151

Contextual Info: ZTX1151A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . VALUE SYMBOL CONDITIONS. TYP. MAX. v (BR)CBO -45 -95 V Ic-IOOpA Collector-Emitter Breakdown Voltage V(BR)CES -40 -90 V lc-100|iA Collector-Emitter Breakdown Voltage V(BR)CEO -40

ic 494

Abstract: ZTX1151A
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC

LT 3142

Abstract: Hall Sensor 13A 439 0-S04
Contextual Info: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-eftect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both

CASE353-01

Contextual Info: It » e | b3t7 S S 4 DOfiDTìS 7 | 6 3 6 7 2 54 MOTOROLA SC CXSTRS/R F . 96D 8 0 9 9 5 T - J? -ÌS MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA s^ sa^ Jesig n er’s D a ta Sh eet xisn - 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON

Contextual Info: 20M E,N TMOV SERIES DATA SHEET METAL OXIDE VARISTOR – TMOV SERIES FEATURE TMOV integrated thermal protection device High peak surge current rating up to 15KA Designed to facilitate compliance to UL1449 for TVSS products Wide operating voltage (V1mA) range from 18V to 1200V.

MJ10047

Abstract: mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A
Contextual Info: It 6 3 6 7 2 54 MOTOROLA SC »e | b3l=?SS4 C X S T R S / R F . DOfiDTìS 96D 7 | 80995 T- ?-fs MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25, 50, and 100 A M P E R E - N P N S IL IC O N P O W E R D A R L IN G T O N T R A N S IS T O R 25 kVA EN E R G Y M A N A G EM EN T S E R IE S

transistor cc 8069

Abstract: cc 8069
Contextual Info: Q a v a n tek UTO/UTC 2024 Series Thin-Fllm Cascadable Amplifier 5 to 2000 MHz FEATURES APPLICATIONS • • • • • IF/RF Amplification Frequency Range: 5 to 2000 MHz High Gain: 16 dB Typ Noise Figure: 4.5 dB (Typ) Temperature Compensated DESCRIPTION

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

LM7824K

Abstract: LM7824CK LM7806K LM7808 TO3 lm7824ct LM7808K vr lm7805 lm340 7805 LM7808 LM7808CK
Contextual Info: LM7800 Series National Semiconductor LM7800 Series 3-Terminal Positive Voltage Regulators General Description Features The LM7800 series of monolithic 3-terminal positive voltage regulators employ internal current-limiting, thermal shut­ down and safe-area compensation, making them essentially