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    TRANSISTOR 123 DL Search Results

    TRANSISTOR 123 DL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 123 DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


    Original     		PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3

    free transistor equivalent book

    Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D


    Original     		PDF DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE

    EIA-468 label location

    Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
    Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


    Original     		PDF DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC­ r14525 EIA-468 label location W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363

    dld101-7

    Abstract: No abstract text available
    Text: DLD101 LINEAR MODE CURRENT SINK LED DRIVER Features Mechanical Data • • • NEW PRODUCT • • • • • • • • • • Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Ideally Suited for Linear Mode Constant Current Applications


    Original     		PDF DLD101 AEC-Q101 DFN3030D-8 DS32007 dld101-7

    STAC3932

    Abstract: RG316-25 STAC3932B 100C 700B TL11
    Text: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 STAC3932 RG316-25 100C 700B TL11

    TB03100M

    Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
    Text: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.


    Original     		PDF represented226B, ZMM5227B, ZMM5228B, ZMM5229B, ZMM5230B, ZMM5231B, ZMM5232B, ZMM5233B, ZMM5234B, ZMM5235B, TB03100M TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353

    STAC3932F

    Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
    Text: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC3932F 2002/95/EC STAC244F STAC3932F RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v

    transistor a7n

    Abstract: DIODE A7N A7N transistor 1df diode transistor 123 DL
    Text: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		PDF AOL1408 AOL1408 transistor a7n DIODE A7N A7N transistor 1df diode transistor 123 DL

    STAC3932

    Abstract: STAC3932B STAC244B
    Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932

    Untitled

    Abstract: No abstract text available
    Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive


    Original     		PDF STAC3932B 2002/95/EC STAC244B STAC3932B STAC3932 DocID15449

    orient 817b

    Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b

    transistor 123 DL

    Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
    Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


    Original     		PDF AOL1444 AOL1444 DDD50% transistor 123 DL TRANSISTOR 8FB a406 transistor A7N transistor

    GE Transient Voltage Suppression Manual

    Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 no422-3781 r14525 DL150/D GE Transient Voltage Suppression Manual diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code

    RG316-25

    Abstract: No abstract text available
    Text: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 RG316-25

    1BW TRANSISTOR

    Abstract: transistor 79t
    Text: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode


    OCR Scan     		PDF Q000252 34D32CI7 1BW TRANSISTOR transistor 79t

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs Post amplifier applicable with 1-bit D/A converter BH3561AF The BH3561AF is a post amplifier applicable with 1-bit Dl A converter for compact disc players. •A pplications CD players, etc. •F eatures 1 2-channel analog filter 1C for 1-bit D /A converters.


    OCR Scan     		PDF BH3561AF BH3561AF

    B 647 AC transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PSMN010-55D TrenchMOS transistor Logic level FET FEATURES • • • • • SYMBOL QUICK REFERENCE DATA VDSS = 55 V d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance


    OCR Scan     		PDF PSMN010-55D PSMN010-55D B 647 AC transistor

    SKHI21

    Abstract: SKHI 64 IGBT DRIVER SEMIKRON IGBT gate driver welding chopper transformer FOR UPS ups circuit diagram using igbt 1kW IGBT 1kw mosfet UPS circuit diagram pcb INVERTER 10kW
    Text: se MIKR dn Absolute Maximum Ratings Symbol Vs V iH < o I CL IouLAVmax Vc e dv/dL V isolIO V isol12 RGonmin RGoffmin Q ouL/pulse T op T sLa Term Supply volLage prim. InpuL signal volLage High OuLpuL peak currenL OuLpuL average currenL (max.) CollecLor-EmiLLer volLage sense across


    OCR Scan     		PDF Visol12 SKHI21 SKHI 64 IGBT DRIVER SEMIKRON IGBT gate driver welding chopper transformer FOR UPS ups circuit diagram using igbt 1kW IGBT 1kw mosfet UPS circuit diagram pcb INVERTER 10kW

    T-39-ZI

    Abstract: 1BW TRANSISTOR transistor 1BW
    Text: T S ^ - 'S I F 400 R12 KL SEE EUPEC Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Maximum rated values 1200 V 400 A V ces QOQOEbM Thermische Eigenschaften Transistor Transistor 3 MG3 S T 7 ]> MDI « U P E C Thermal properties R,hjc


    OCR Scan     		PDF -T-39--ZI 34D32CI7 T-39-ZI 1BW TRANSISTOR transistor 1BW

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20P03H DL HDTMOS E-FET™ High Density Pow er FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM


    OCR Scan     		PDF MTD20P03HDL/D 2PHX43416-0

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESS EY ADVANCE INFORMATION S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of live high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The


    OCR Scan     		PDF SL3245 SL3245 SL3045 SL3145. 37bfl522 0021GT3 60MHz

    LB 124 transistor

    Abstract: transistor 45 f 123 BU2506DF
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


    OCR Scan     		PDF BU2506DF LB 124 transistor transistor 45 f 123 BU2506DF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK554-200A/B BUK554 -200A -200B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK454-800A/B BUK454 -800A -800B T0220AB