TRANSISTOR 126 Search Results

TRANSISTOR 126 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 126 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
2SC4342 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SC4342 TO-126 (MP-5)	Original	PDF	2SC4342 2SC4342 O-126
2SC4342 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SC4342 TO-126 (MP-5)	Original	PDF	2SC4342 2SC4342 O-126
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 TO-126C	Original	PDF	2SB772 O-126 2SB772 O-126C 2SD882 O-92NL O-251 O-252 2SB772L 2SB772-x-T60-K
2sb772 Abstract: 2SB772L 2SB772 TO-252 Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 TO-126C	Original	PDF	2SB772 2SB772 O-126 O-126C 2SD882 O-92NL O-251 O-252 2SB772L 2SB772-x-T60-K 2SB772L 2SB772 TO-252
2sb772 Abstract: 2SB772L 2SB772L TO-92NL T6C transistor 2SB772 TO-252 2SB772 TO-126 2SB772 TO-251 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 TRANSISTOR Transistor 2sb772 Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 TO-126C	Original	PDF	2SB772 2SB772 O-126 O-126C 2SD882 O-92NL O-251 O-252 2SB772L 2SB772-x-T60-K 2SB772L 2SB772L TO-92NL T6C transistor 2SB772 TO-252 2SB772 TO-126 2SB772 TO-251 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 TRANSISTOR Transistor 2sb772
2SB1149 Abstract: 2SD1692 Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor	Original	PDF	2SD1692 O-126 2SB1149 2SB1149 2SD1692
Untitled Abstract: No abstract text available Text: UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C	Original	PDF	TIP127 TIP127 O-126 QW-R204-017 250IB
Untitled Abstract: No abstract text available Text: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C	Original	PDF	TIP122 TIP122 O-126 QW-R204-016 250IB
BD238 Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458 Text: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor	Original	PDF	BD238 OT-32 O-126) BD237. BD238 bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
tip122 transistor Abstract: OF TRANSISTOR tip122 PT 10000 Text: UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C	Original	PDF	TIP122 TIP122 O-126 QW-R204-016 tip122 transistor OF TRANSISTOR tip122 PT 10000
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
UTC2SB834 Abstract: No abstract text available Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified	Original	PDF	2SB834 O-126 QW-R204-018 UTC2SB834
TIP122 Abstract: TRANSISTOR tip122 Text: TIP120/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS TO-220 • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS : TIP120 Characteristic Collector-Base Voltage : TIP121 : TIP122 : TIP120 Collector-Emitter Voltage	Original	PDF	TIP120/121/122 O-220 TIP125/126/127 TIP120 TIP121 TIP122 TIP122 TRANSISTOR tip122

TIP125 Abstract: TIP127 Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS TO-220 • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage : TIP125 : TIP126 : TIP127 Collector Emitter Voltage Characteristic	Original	PDF	TIP125/126/127 O-220 TIP120/121/122 TIP125 TIP126 TIP127 TIP125 TIP127
transistor BD 110 Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524 Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal	OCR Scan	PDF	fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524
BD 130 NPN transistor Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330 Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly	OCR Scan	PDF	00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
bfq162 Abstract: BFQ16 Text: Philips Semiconductors Product specification NPN video transistor BFQ162 FEATURES DESCRIPTION • Low output capacitance • Good thermal stability NPN video transistor in a SOT32 TO-126 package. • Gold metallization ensures excellent reliability. PINNING	OCR Scan	PDF	O-126) BFQ162 bfq162 BFQ16
Untitled Abstract: No abstract text available Text: 2SB772L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA FNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR •ackage: TO-126 FEATURES current output up to 3A ♦Low saturation voltage *Con$femert lo 2SD882L APPLICATIONS	OCR Scan	PDF	2SB772L O-126 2SD882L 300uS -100uA -20mA
transistor BD Abstract: TRANSISTOR bd 330 Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly	OCR Scan	PDF	fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330
Untitled Abstract: No abstract text available Text: 2SD882L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTTL TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR Package: TO-126 FEATURES •High currert oiMput 14 to 3A •Low saturation voltage ♦Conplem eii to 2SB772L APPLICATIONS	OCR Scan	PDF	2SD882L O-126 2SB772L 100uA
Bd 130 NPN transistor Abstract: 62702-D394 transistor z5 Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly	OCR Scan	PDF	623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5
Q62702-D401 Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor Text: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly	OCR Scan	PDF	fl23SbDS Q62702-D395 330/BD Q62702-D401 Q62902-B63 200ps[ 23SbOS Q0043S1 Q62702-D401 TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

TRANSISTOR 126 Search Results

TRANSISTOR 126 Result Highlights (5)

TRANSISTOR 126 Datasheets Context Search

MN1280

2SC4342

2SC4342

Untitled

2sb772

2sb772

2SB1149

Untitled

Untitled

BD238

tip122 transistor

oz960

UTC2SB834

TIP122

TIP125

transistor BD 110

BD 130 NPN transistor

bfq162

Untitled

transistor BD

Untitled

Bd 130 NPN transistor

Q62702-D401

la 4440 amplifier circuit diagram 300 watt