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    TRANSISTOR 1264 Search Results

    TRANSISTOR 1264 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −4.0


    Original     		PDF MPS6729 O-226) MPSW55 MPSW56

    EB209

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1 AN215A, EB209

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1 AN215A,

    MRF1550

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1 AN215A, MRF1550

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1 AN215A,

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1/D MRF1535T1

    FERROXCUBE VK200

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1/D MRF1535T1 MRF1535T1/D FERROXCUBE VK200

    EB209

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1/D MRF1550T1 MRF1550T1/D EB209

    AN4005

    Abstract: A05T AN211A AN215A AN721 MRF1535T1 VK200 capacitor 475
    Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1/D MRF1535T1 MRF1535T1 AN4005 A05T AN211A AN215A AN721 VK200 capacitor 475

    "RF power MOSFETs"

    Abstract: AN4005 AN721 MRF1550T1 VK200 A05T AN211A AN215A
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1/D MRF1550T1 MRF1550T1 "RF power MOSFETs" AN4005 AN721 VK200 A05T AN211A AN215A

    L5N1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1535T1/D MRF1535T1 L5N1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1/D MRF1550T1

    CEM4431

    Abstract: No abstract text available
    Text: CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.8A, RDS ON = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM4431 CEM4431

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    NTE7493A

    Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86


    OCR Scan     		PDF NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE74S6, NTE74HC86 14-Lead NTE74LS86, NTE7493A NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74C90

    transistor d 1264 a

    Abstract: transistor A 1264 transistor d 1264
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK98150-55 OT223 OT223. transistor d 1264 a transistor A 1264 transistor d 1264

    NTE7493A

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B


    OCR Scan     		PDF NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE7486, NTE74HC86 14-Lead NTE74LS86, NTE7493A

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C


    OCR Scan     		PDF Q62702-F102 OT-23 IS21el2 IS21/S aS35bG5 Giai71b

    equivalent transistor c 5888

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency


    OCR Scan     		PDF bbS3R31 BFS520 OT323 OT323 OT323. equivalent transistor c 5888

    transistor A 1264

    Abstract: ev 1265 transistor
    Text: SIEMENS BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA ' f j = 7,5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-343 Q62702-F1504 transistor A 1264 ev 1265 transistor

    DARLINGTON TRANSISTOR ARRAYS pu1501

    Abstract: PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456
    Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) PU4000 Series 8 Pin -SIP Package (D72) (D73) Equivalent Circuit ^ ^ " \S tr u c tu r e PUA3000 Series I 10 Pin *S IP Package (D74)


    OCR Scan     		PDF PU3000 PUA3000 PU4000 PU3110 PU3210 PU4110 PU4210 PU4410 PU4510 PU4310 DARLINGTON TRANSISTOR ARRAYS pu1501 PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456