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    TRANSISTOR 126M Search Results

    TRANSISTOR 126M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 126M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


    Original     		PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

    OC 140 germanium transistor

    Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
    Text: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.


    Original     		PDF HD200203 HSD879D O-126ML 183oC 217oC 260oC OC 140 germanium transistor germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor

    germanium transistors NPN

    Abstract: in 3003 TRANSISTOR HSD879D Germanium Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-126ML • Charger-up time is about 1 ms faster than of a germanium transistor.


    Original     		PDF HD200203 HSD879D O-126ML germanium transistors NPN in 3003 TRANSISTOR HSD879D Germanium Transistor

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    HBD437D

    Abstract: DSA0026081
    Text: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic


    Original     		PDF HD200201 HBD437D HBD437D O-126ML HBD438D. O-126ML Collecto60 183oC 217oC 260oC DSA0026081

    HSB1109

    Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP
    Text: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML


    Original     		PDF HE6607 HSB1109 HSD1609 O-126ML 183oC 217oC 260oC HSB1109 HSD1609 sb1109 TL 188 TRANSISTOR PNP

    HSB1109

    Abstract: HSD1609
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML


    Original     		PDF HE6607 HSB1109 HSD1609 O-126ML HSB1109 HSD1609

    HSD1609

    Abstract: HSB1109
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML


    Original     		PDF HE6606 HSD1609 HSB1109 O-126ML HSD1609 HSB1109

    MJE13003D

    Abstract: 180-TYP
    Text: DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning .163 4.12


    Original     		PDF MJE13003D O-126ML MJE13003D 180-TYP

    lb123d

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter


    Original     		PDF LB123D O-126ML lb123d

    sd1609

    Abstract: sd 1609 TO126ML HSB1109 HSD1609
    Text: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML


    Original     		PDF HE6606 HSD1609 HSB1109 O-126ML 183oC 217oC 260oC sd1609 sd 1609 TO126ML HSB1109 HSD1609

    HMPSA44V

    Abstract: A44V
    Text: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML


    Original     		PDF HE6611 HMPSA44V HMPSA44V O-126ML 300mV HMPSA94V 183oC 217oC 260oC A44V

    2SD882D

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SD882D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning


    Original     		PDF 2SD882D O-126ML 2SD882D

    2SB772D

    Abstract: transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034
    Text: DC COMPONENTS CO., LTD. 2SB772D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning


    Original     		PDF 2SB772D O-126ML -20mA, 2SB772D transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034

    HSB857D

    Abstract: HE6705
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings Ta=25°C TO-126ML • Maximum Temperatures


    Original     		PDF HE6705 HSB857D O-126ML HSB857D HE6705

    TL 188 TRANSISTOR PNP

    Abstract: HTIP117D
    Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed


    Original     		PDF HD200204 HTIP117D O-126ML HTIP117D 183oC 217oC 260oC TL 188 TRANSISTOR PNP

    TL 188 TRANSISTOR PNP

    Abstract: HSB857D
    Text: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C • Maximum Temperatures


    Original     		PDF HE6705 HSB857D O-126ML 183oC 217oC 260oC TL 188 TRANSISTOR PNP HSB857D

    C5201 transistor

    Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
    Text: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML


    Original     		PDF C653D3 BTC5201D3 O-126ML UL94V-0 C5201 transistor c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3

    B1143

    Abstract: transistor D1683 2SD 1143 2SB1143S
    Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes


    Original     		PDF EN2063C 2SB1143/2SD1683 O-126ML 2SB1143 B1143 transistor D1683 2SD 1143 2SB1143S

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz


    Original     		PDF HE6602 HSC3953 O-126ML 500MHz 120Vmin 183oC 217oC 260oC

    sc2682

    Abstract: HSC2682
    Text: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C


    Original     		PDF HE6626 HSC2682 O-126ML 183oC 217oC 260oC sc2682 HSC2682

    sd669a

    Abstract: HSD669A HSB649A
    Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C


    Original     		PDF HE6630 HSD669A HSB649A O-126ML 150oC 200oC 183oC 217oC 260oC 245oC sd669a HSD669A HSB649A

    HSB649A

    Abstract: HSD669A 180320 HSD669A-C
    Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2003.06.18 Page No. : 1/3 MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings Ta=25°C


    Original     		PDF HE6630 HSD669A HSB649A O-126ML HSB649A HSD669A 180320 HSD669A-C

    HSB649A

    Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A
    Text: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C


    Original     		PDF HE6629 HSB649A HSD669A. O-126ML 183oC 217oC 260oC HSB649A TL 188 TRANSISTOR PNP SB649A HSD669A