TRANSISTOR 1317 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

SEMICOA 2N2946A

Contextual Info: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA Corporaton offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)

2N2946A JANTX

Abstract: 2N2946
Contextual Info: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)

BFT46

Contextual Info: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous

lm394

Abstract: LM194 NPN Monolithic Transistor Pair accurate logging amplifier LM394CH
Contextual Info: LM194/LM394 EHNational ^•Sem iconductor LM194/LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional tran­

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

PHX27NQ11T

Contextual Info: PHX27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

PHX23NQ11T

Abstract: TO-220F JEDEC
Contextual Info: PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

PHB110NQ06LT

Abstract: PHP110NQ06LT
Contextual Info: PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

PHB119NQ06T

Abstract: PHP119NQ06T
Contextual Info: PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold

PHB145NQ06T

Contextual Info: PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

PHB146NQ06LT

Contextual Info: PHB146NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold

IR LFN

Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International

SN7S85

Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS50 SN7S85 JANTX2N7225 "* ~ ~ JAIMTXV2N7225 N-CHANNEL [R E F : M IL -8 -1 9 5 0 0 / 5 9 S ] Product Summary 200 Volt, 0.100 Ohm HEXFET

C3781

Abstract: 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324
Contextual Info: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR t N-CHANNEL IRFMS50 SN7SS5 JANTX2N7S25 JAIMTXV2N7225 REF: MIL-S-19500/5 9 5 ] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International