TRANSISTOR 1345 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

PBLS4005V

Abstract: PBLS4005Y marking S5 sot363 marking K5 sot363
Contextual Info: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 02 — 13 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4004Y

Abstract: PBLS4004V sot363 marking K4
Contextual Info: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 02 — 11 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4003V

Abstract: PBLS4003Y
Contextual Info: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4001V

Abstract: PBLS4001Y 13454
Contextual Info: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

PBLS4003V

Abstract: Philips date CODE MARKING PBLS4003Y
Contextual Info: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 01.00 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number

PBLS4004Y

Abstract: PBLS4004V sot363 marking K4
Contextual Info: PBLS4004Y; PBLS4004V 40 V PNP BISS loadswitch Rev. 01 — 13 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

PBLS4001V

Abstract: PBLS4001Y
Contextual Info: PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

PBLS4002Y

Abstract: PBLS4002V
Contextual Info: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

PBLS4002Y

Abstract: PBLS4002V
Contextual Info: PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1:

PBLS4005V

Abstract: PBLS4005Y
Contextual Info: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 01 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1: Product overview Type number Package

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 5 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1855 is a switching device which can be driven directly by a 2.5 V power source.

IR2422

Abstract: DARLINGTON TRANSISTOR ARRAY J5001 BVCEO-45V T-52-13-45 45VForward
Contextual Info: 1SE 0 | SHARP ELEK/ MELEC DIV 7-Unit 400mA Darlington Transistor Array 01007=10 0001=157 5 | T -5 2 -13-45 IR2422 7-Unit 400mA Darlington Transistor Array • Description Pin Connections The IR2422 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

CA3246M

Abstract: transistor k 911
Contextual Info: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate

CA3246M

Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
Contextual Info: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate

2SB983

Abstract: 2SD1345
Contextual Info: TENTATIVE D AT A îfH Ü T t C A T .N o . TK 350 SHINDENGEN Silicon Complementary Transistor High Current Switching SILICON POWER TRANSISTOR I = rV 3 ^ / i 7 - K T ^ s / 7 > IJ □ > N P N / P N P x M O U T L IN E - f 7 u — r m FEATURES D IM E N S IO N S

cm 45-12

Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Contextual Info: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l

1117 S 3,3 Transistor

Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Contextual Info: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .

Semiconductor 1346 transistor

Contextual Info: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage

Contextual Info: 2 CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT) .>3GHz The CA3227 and CA3246 consist of five general purpose sil­

transistor 1345

Abstract: CA3246E 4460E 1333E
Contextual Info: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­