TRANSISTOR 149 Search Results

TRANSISTOR 149 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 149 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NEC 2403 Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.	Original	2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614	PDF
NEC 2905 Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.	Original	2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC	PDF
A 564 transistor Abstract: 3181 R33 transistor A 564 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564	PDF
transistor NEC D 587 Abstract: 3181 R33 transistor c 3181 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.	OCR Scan	2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181	PDF
nec 2561 Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356 Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to	Original	2SC5337 2SC5337 2SC3356 nec 2561 NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356	PDF
2SC4225 Abstract: 9015 transistor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.	Original	2SC4225 2SC4225 9015 transistor	PDF
2SA1424 Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage	Original	2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent	PDF
transistor NEC D 822 P Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624	PDF
transistor NEC D 822 P Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.	OCR Scan	2SC4228 2SC4228 transistor NEC D 822 P	PDF
NEC NF 932 Abstract: 2SC4092 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.	Original	2SC4092 2SC4092 S21e2 NEC NF 932	PDF
nec 473 Abstract: transistor cc 5551 nec 561 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.	OCR Scan	2SC4093 2SC4093 2SC40ts nec 473 transistor cc 5551 nec 561	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
2SC4092 Abstract: of IC 4013 n NEC NF 932 marking R4 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.	Original	2SC4092 2SC4092 S21e2 of IC 4013 n NEC NF 932 marking R4	PDF
transistor D 2395 Abstract: NEC 2501 re 443 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.	OCR Scan	2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443	PDF

transistor D 2588 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.	OCR Scan	2SC4092 2SC4092 transistor D 2588	PDF
2SC5436 Abstract: 2SC5800 uPA863TD-Q2 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2	PDF
equivalent ZO 607 Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872	Original	HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor	PDF
2SC5603 Abstract: 2SC5676 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor	Original	PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676	PDF
ic 901 Abstract: 2SC5603 2SC5676 uPA846TC-T1 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor	Original	PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1	PDF
2SC5435 Abstract: 2SC5600 IC 14558 5mA25 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor	Original	PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25	PDF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS	PDF
9904 120 13843 Abstract: 2SC5435 2SC5800 nec 4308 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308	PDF
702 transistor smd code Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752 Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872	Original	HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752	PDF
st zo 607 Abstract: 2SC5436 2SC5800 30614 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 st zo 607 2SC5436 2SC5800 30614	PDF

TRANSISTOR 149 Search Results

TRANSISTOR 149 Result Highlights (5)

TRANSISTOR 149 Datasheets Context Search

NEC 2403

NEC 2905

A 564 transistor

transistor NEC D 587

nec 2561

2SC4225

2SA1424

transistor NEC D 822 P

transistor NEC D 822 P

NEC NF 932

nec 473

transistor s11 s12 s21 s22

2SC4092

transistor D 2395

transistor D 2588

2SC5436

equivalent ZO 607

2SC5603

ic 901

2SC5435

9904 120 13843

702 transistor smd code

st zo 607