TRANSISTOR 15 GHZ Search Results

RF TRANSISTOR 10 GHZ low noise

Abstract: motorola rf Power Transistor RF POWER TRANSISTOR NPN, motorola ultra low noise NPN transistor
Contextual Info: MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

Motorola

Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

Contextual Info: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •

Ericsson 20082

Abstract: 20082 PTB 20082
Contextual Info: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion

Ericsson 20082

Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion

Ericsson 20082

Contextual Info: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion

a 4x transistor

Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using

Ericsson 20082

Abstract: 15W-class
Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 Watts linear output power, it may be used for both CW and PEP applications.

motorola rf Power Transistor

Abstract: transistor ghz
Contextual Info: MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

Contextual Info: SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases

BFG425W

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN

"MARKING CODE P5"

Abstract: BFG425W transistor nf 37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain

sot-343 as

Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

1617AB15

Abstract: BVces
Contextual Info: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION

20082

Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1800 - 2000 MHz Cellular Radio Power Transistor Key Features Description Specified 10 Watts linear power P-idB@ 15 Watts, .8 - 2.0 GHz Class AB Characteristics Collector Efficiency 55% @ 100 W CW Gold Metallization Silicon Nitride Passjvated

Contextual Info: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

2015M

Abstract: 2015M-2
Contextual Info: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed

SCA-15

Contextual Info: SCA-15 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-15 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between

120C

Abstract: SCA-15
Contextual Info: Product Description SCA-15 Stanford Microdevices’ SCA-15 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   

transistor l2

Abstract: transistor bf 194
Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   