TRANSISTOR 1557 B Search Results

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

r58 ah16

Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Contextual Info: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage

MRF245

Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Contextual Info: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE

SD1076

Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Contextual Info: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­

PT8740

Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

Contextual Info: EL2160C F eatu res G eneral D escrip tion • 130 M Hz 3 dB bandwidth Ay = + 2 • 180 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain, R l = 500ft • 0.01° differential phase, R l = 500ft • Low supply current, 8.5 mA • Wide supply range, ± 2V to ± 15V

MRF245

Abstract: CM45-12A BFS51 SD1451 J03055 2N6197 BLY22 SD1076 PT8740 PT8811
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ com m unications m obiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574

Contextual Info: la n t e c HiGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2243C é EL2243C Dual Fast Single-Supply Decompensated Op Amp F e a tu r e s G e n e ra l D e s c rip tio n • Inputs and outputs operate at negative supply rail • Gain bandwidth product—70 MHz

2N918

Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574

04ti

Contextual Info: EL2260C/EL2460C to r D ual 'Quad/'JO M fh t'urrrnt f'rtd b a ck 1m plifivrs HIGHPERFORMSNCEANAIOS INTEGRATEDCfflCUrTS F e a tu r e s G en era l D e sc r ip tio n • 130 MHz 3 dB bandwidth Av = + 2 • 180 M Hz 3 dB bandwidth (Av = + 1 ) • 0.01% differential gain,

Contextual Info: la n t e c NIGH PERFORMANCE ANAUOG INTEGRATED CIRCUITS EL2002C Low Power, 180 MHz Buffer Am plifier F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary

Contextual Info: EL2012 5 AE D é ia n ie t H B H PERFORMANCE ANAUQG INTEGRATED CtRCtttTS Features • 80 MHz bandwidth with 50fl load • 250 mA output current • Gain = 0.999 + with 500 load • V 0s ± 4m V • Short circuit protected • Power package with isolated metal tab

Contextual Info: EL2001C elantec high EL2001C Low Power, 70 MHz Buffer A mplifier F eatu res G eneral D escrip tion • • • • • • • • • • The EL2001 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary

Gan on silicon transistor

Contextual Info: GAN-ON-SI FAILURE MECHANISMS AND RELIABILITY IMPROVEMENTS S. Singhal, J.C. Roberts, P. Rajagopal, T. Li, A.W. Hanson, R. Therrien, J.W. Johnson, I.C. Kizilyalli, K.J. Linthicum Nitronex Corporation 628 Hutton Street, Suite 106, Raleigh, NC, 27606 phone: 919-807-9100; fax: 919-807-9200; e-mail: ssinghal@nitronex.com

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

20-PIN

Abstract: LR36685 RJ21P3AA0PT Q455 SMR 56-7
Contextual Info: BACK RJ21P3AA0PT 1/1.8-type Interline Color CCD Area Sensor with 3 370 k Pixels RJ21P3AA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21P3AA0PT is a 1/1.8-type (8.93 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

Contextual Info: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2001C Low Power, 70 MHz Buffer Amplifier Features General Description • 1.3 mA supply current • 7 0 M Hz bandw idth • 2000 V/f-ts slew rate • Low bias current, 1 jiA typical •1 0 0 mA output current • Short circuit protected