TRANSISTOR 1616
Abstract: No abstract text available
Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER
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MMBT1616/A
MMBT1616
OT-23
MMBT1616A
width10ms,
QW-R206-036
TRANSISTOR 1616
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PHILIPS SENSOR 2032
Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V
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1616H
101CCD
WAG-05
PHILIPS SENSOR 2032
.47k capacitor image
ccd image sensor
Contact image sensor
BAS28
BAT74
BC860C
BFR92
BG40
CCD output buffer
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utc d1616a
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 JEDEC TO-236 ORDERING INFORMATION Order Number Note: MMBT1616G-x-AE3-R
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MMBT1616/A
OT-23
O-236)
MMBT1616G-x-AE3-R
MMBT1616AG-x-AE3-R
MMBT1616L-x-AE3-R
MMBT1616
utc d1616a
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D1616A
Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number
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MMBT1616/A
OT-23
MMBT1616L/MMBT16AL
MMBT1616-x-AE3-R
MMBT1616L-x-AE3-R
MMBT1616A-x-AE3-R
MMBT1616AL-x-AE3-R
D1616A
d1616 a
D1616
transistor d1616a
TRANSISTOR D1616
MMBT1616A
MMBT1616
D1616 marking transistor
MMBT1616AL
utc 1616
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YAGEO RC0603JR-070RL
Abstract: Venkel CR0603 10W 100K preset vertical RC0603FR-07100KL C0603C0G500-220JNE smd 0201 Keystone 5000 red 5mm LED with holder smd L21 L21 SMD
Text: Application Note 1616 Author: Paul Orfanu ISL8036CRSHEVAL1Z Current Sharing 6A Low Quiescent Current High Efficiency Synchronous Buck Regulator Description Quick Setup Guide The ISL8036CRSHEVAL1Z kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from
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ISL8036CRSHEVAL1Z
ISL8036
46cm2
AN1616
YAGEO RC0603JR-070RL
Venkel CR0603 10W
100K preset vertical
RC0603FR-07100KL
C0603C0G500-220JNE
smd 0201
Keystone 5000
red 5mm LED with holder
smd L21
L21 SMD
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transistor BC 458
Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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MS011795
transistor BC 458
transistor BC 945
ac 1084
transistor bc 577
Transistor BC 585
MS-015-AB
TRANSISTOR A42
bd 743 transistor
uA109
CA 358 AE
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transistor BC 458
Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and
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Untitled
Abstract: No abstract text available
Text: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 22k 22k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA124EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 22k.
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DTA124E
-100mA
100mA
DTA124EM
SC-105AA)
DTA124EEB
SC-89)
R1120A
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Untitled
Abstract: No abstract text available
Text: DTA123J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN GND IN GND DTA123JM (SC-105AA) EMT3 DTA123JEB (SC-89) UMT3F
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DTA123J
-100mA
100mA
DTA123JM
SC-105AA)
DTA123JEB
SC-89)
R1120A
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Untitled
Abstract: No abstract text available
Text: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA114YM (SC-105AA) EMT3 DTA114YEB (SC-89) UMT3F
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DTA114Y
-100mA
100mA
DTA114YM
SC-105AA)
DTA114YEB
SC-89)
R1120A
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Untitled
Abstract: No abstract text available
Text: DTA143E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 4.7k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7k.
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DTA143E
-100mA
100mA
DTA143EM
SC-105AA)
DTA143EEB
SC-89)
R1120A
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Untitled
Abstract: No abstract text available
Text: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features
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DTA114E
-100mA
100mA
DTA114EM
DTA114EEB
SC-89)
SC-105AA)
DTA114EE
OT-416
SC-75A)
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Untitled
Abstract: No abstract text available
Text: DTA143X series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143XM (SC-105AA) EMT3 DTA143XEB (SC-89) UMT3F
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DTA143X
-100mA
100mA
DTA143XM
SC-105AA)
DTA143XEB
SC-89)
R1120A
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DTA115E
Abstract: No abstract text available
Text: DTA115E series PNP -100mA -50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -50V -100mA 100kW 100kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA115EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 100kW.
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DTA115E
-100mA
100kW
100kW
DTA115EM
SC-105AA)
DTA115EEB
SC-89)
100kW.
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DTC115E
Abstract: DTC115EUA
Text: DTC115E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 100kW 100kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC115EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 100kW.
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DTC115E
100mA
100kW
100kW
DTC115EM
SC-105AA)
DTC115EEB
SC-89)
100kW.
DTC115EUA
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dtc144e
Abstract: DTC144EUA
Text: DTC144E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 47kW 47kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC144EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW.
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DTC144E
100mA
DTC144EM
SC-105AA)
DTC144EEB
SC-89)
R1120A
DTC144EUA
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KSB1116
Abstract: TRANSISTOR 1616 ac
Text: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116
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KSB1116/1116A
KSB1116A
KSB1116
KSB116A
KSB1116
TRANSISTOR 1616 ac
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TRANSISTOR 1616 ac
Abstract: 02NF SOT23 02nf YI SOT23-5
Text: >kiyjxiyvi 19-1225; Rev 2; 1/98 High-Voltage, L o w - P o w e r Linear Regulators f or N o t e b o o k C o m p u t e r s _ F e a t u r e s The MAX1615/MAX1616 are micropower, SOT23-5 lin ear regulators that supply always-on, keep-alive power
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MAX1615)
MAX1616)
MAX1615/MAX1616
OT23-5
TRANSISTOR 1616 ac
02NF SOT23
02nf
YI SOT23-5
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Untitled
Abstract: No abstract text available
Text: ykiyjxivki 19-1225; Rev 2 ; 1/98 High-Voltage, Low-Power Linear Regulators for Notebook Computers The MAX1615/MAX1616 are m icropower, SOT23-5 lin ear regulators that supply always-on, keep-alive power to CMOS RAM and m icrocontrollers ^Cs in systems with high-voltage batteries. Key features include w ide
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MAX1615/MAX1616
OT23-5
MAX1615)
MAX1616)
SDT23,
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Untitled
Abstract: No abstract text available
Text: Section 16. Electrical Specifications 16.1 16 Absolute M axim um Ratings Table 16-1 lists the absolute maximum ratings. Table 16-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0.3 to +7.0 V Programming voltage V pp -0.3 to +13.5
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transistor BC 157
Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as
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BC160
BC160'
160/BC140
BC161/BC141
8C161
transistor BC 157
TRANSISTOR BC 181
BC181
transistor 2sc 1586
transistor BC SERIES
TRANSISTOR "BC 157"
TRANSISTOR BC 650 c
BC transistor series
Siemens a35
BC161-10
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D 1413 transistor
Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249
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16-Lead
14-LeadDIP
16-LeadDIP
256-Bit
64-Blt
NTE74190
NTE74LS190
D 1413 transistor
NTE74191
transistor K 1413
32 bit carry select adder code
transistor a 1413
NTE74LS191
NTE74LS190
5.1 diagram
NTE74
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TRANSISTOR BC 157
Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as
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23SbOS
BC160
Q62702-C228
Q62702-C228-V6
Q62702-C228-V10
Q62702-C228-V16
Q62702-C228-P
160/BC140
Q62702-C228-S2
BC1611>
TRANSISTOR BC 157
BC181
transistor bc160
TRANSISTOR "BC 157"
transistor 2sc 1586
transistor BC 55
transistor BC SERIES
f15n
transistor bc 102
BC161 transistor
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET PHP50N03LT, PHB50N03LT, PHD50N03LT SYMBOL FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP50N03LT,
PHB50N03LT,
PHD50N03LT
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