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    TRANSISTOR 1616 AC Search Results

    TRANSISTOR 1616 AC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1616 AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 1616

    Abstract: No abstract text available
    Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER


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    PDF MMBT1616/A MMBT1616 OT-23 MMBT1616A width10ms, QW-R206-036 TRANSISTOR 1616

    PHILIPS SENSOR 2032

    Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
    Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V


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    PDF 1616H 101CCD WAG-05 PHILIPS SENSOR 2032 .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer

    utc d1616a

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION  * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Order Number Note: MMBT1616G-x-AE3-R


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    PDF MMBT1616/A OT-23 O-236) MMBT1616G-x-AE3-R MMBT1616AG-x-AE3-R MMBT1616L-x-AE3-R MMBT1616 utc d1616a

    D1616A

    Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number


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    PDF MMBT1616/A OT-23 MMBT1616L/MMBT16AL MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R D1616A d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616

    YAGEO RC0603JR-070RL

    Abstract: Venkel CR0603 10W 100K preset vertical RC0603FR-07100KL C0603C0G500-220JNE smd 0201 Keystone 5000 red 5mm LED with holder smd L21 L21 SMD
    Text: Application Note 1616 Author: Paul Orfanu ISL8036CRSHEVAL1Z Current Sharing 6A Low Quiescent Current High Efficiency Synchronous Buck Regulator Description Quick Setup Guide The ISL8036CRSHEVAL1Z kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from


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    PDF ISL8036CRSHEVAL1Z ISL8036 46cm2 AN1616 YAGEO RC0603JR-070RL Venkel CR0603 10W 100K preset vertical RC0603FR-07100KL C0603C0G500-220JNE smd 0201 Keystone 5000 red 5mm LED with holder smd L21 L21 SMD

    transistor BC 458

    Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
    Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and


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    PDF MS011795 transistor BC 458 transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE

    transistor BC 458

    Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
    Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and


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    Untitled

    Abstract: No abstract text available
    Text: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 22k 22k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA124EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 22k.


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    PDF DTA124E -100mA 100mA DTA124EM SC-105AA) DTA124EEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA123J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN GND IN GND DTA123JM (SC-105AA) EMT3 DTA123JEB (SC-89) UMT3F


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    PDF DTA123J -100mA 100mA DTA123JM SC-105AA) DTA123JEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA114YM (SC-105AA) EMT3 DTA114YEB (SC-89) UMT3F


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    PDF DTA114Y -100mA 100mA DTA114YM SC-105AA) DTA114YEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA143E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 4.7k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 4.7k.


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    PDF DTA143E -100mA 100mA DTA143EM SC-105AA) DTA143EEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features


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    PDF DTA114E -100mA 100mA DTA114EM DTA114EEB SC-89) SC-105AA) DTA114EE OT-416 SC-75A)

    Untitled

    Abstract: No abstract text available
    Text: DTA143X series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143XM (SC-105AA) EMT3 DTA143XEB (SC-89) UMT3F


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    PDF DTA143X -100mA 100mA DTA143XM SC-105AA) DTA143XEB SC-89) R1120A

    DTA115E

    Abstract: No abstract text available
    Text: DTA115E series PNP -100mA -50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -50V -100mA 100kW 100kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA115EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 100kW.


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    PDF DTA115E -100mA 100kW 100kW DTA115EM SC-105AA) DTA115EEB SC-89) 100kW.

    DTC115E

    Abstract: DTC115EUA
    Text: DTC115E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 100kW 100kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC115EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 100kW.


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    PDF DTC115E 100mA 100kW 100kW DTC115EM SC-105AA) DTC115EEB SC-89) 100kW. DTC115EUA

    dtc144e

    Abstract: DTC144EUA
    Text: DTC144E series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 100mA 47kW 47kW IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTC144EM (SC-105AA) EMT3 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW.


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    PDF DTC144E 100mA DTC144EM SC-105AA) DTC144EEB SC-89) R1120A DTC144EUA

    KSB1116

    Abstract: TRANSISTOR 1616 ac
    Text: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116


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    PDF KSB1116/1116A KSB1116A KSB1116 KSB116A KSB1116 TRANSISTOR 1616 ac

    TRANSISTOR 1616 ac

    Abstract: 02NF SOT23 02nf YI SOT23-5
    Text: >kiyjxiyvi 19-1225; Rev 2; 1/98 High-Voltage, L o w - P o w e r Linear Regulators f or N o t e b o o k C o m p u t e r s _ F e a t u r e s The MAX1615/MAX1616 are micropower, SOT23-5 lin­ ear regulators that supply always-on, keep-alive power


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    PDF MAX1615) MAX1616) MAX1615/MAX1616 OT23-5 TRANSISTOR 1616 ac 02NF SOT23 02nf YI SOT23-5

    Untitled

    Abstract: No abstract text available
    Text: ykiyjxivki 19-1225; Rev 2 ; 1/98 High-Voltage, Low-Power Linear Regulators for Notebook Computers The MAX1615/MAX1616 are m icropower, SOT23-5 lin­ ear regulators that supply always-on, keep-alive power to CMOS RAM and m icrocontrollers ^Cs in systems with high-voltage batteries. Key features include w ide


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    PDF MAX1615/MAX1616 OT23-5 MAX1615) MAX1616) SDT23,

    Untitled

    Abstract: No abstract text available
    Text: Section 16. Electrical Specifications 16.1 16 Absolute M axim um Ratings Table 16-1 lists the absolute maximum ratings. Table 16-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0.3 to +7.0 V Programming voltage V pp -0.3 to +13.5


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    transistor BC 157

    Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
    Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


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    PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10

    D 1413 transistor

    Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
    Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249


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    PDF 16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


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    PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET PHP50N03LT, PHB50N03LT, PHD50N03LT SYMBOL FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


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    PDF PHP50N03LT, PHB50N03LT, PHD50N03LT