TRANSISTOR 18W ON Search Results

NPT35015

Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

18w transistor

Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

2SC2782A

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

33PFX4

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Contextual Info: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

NPN 2SC2782

Abstract: transistor 2sc2782 2SC2782
Contextual Info: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

Contextual Info: 2SC2782A TOSHIBA Transistor Silicon Npn Epitaxial Planar Type 2SC2782A VHF Band Power Amplifier Applications Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

NPN 2SC2782

Abstract: transistor 2sc2782
Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

NPN 2SC2782

Contextual Info: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

smd diode code 18W

Abstract: 3.40 pf variable capacitor 700B AN1294 PD57018 PD57018-E PD57018S PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E PD57018S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package PowerSO-10RF

Contextual Info: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

2SC1945

Abstract: 2SC1945 Transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2

omron plc CQM1H CPU 51 configuration

Abstract: CQM1-ID212 OMRON CQM1H-CPU51 OMRON CQM1 programming manual OMRON CQM1H-CPU11 OMRON plc programming console manual CQM1H-CPU51 programming manual CQM1-PA206 omron Communication cables pin diagram OMRON plc programming console manual cqm1h-cpu51
Contextual Info: PRODUCT OVERVIEW CQM1H Programmable Controller Features The CQM1H series programmable controller offers advanced flexibility, powerful communication options, and has features traditionally found only in full rack PLC systems. The CQM1H’s rack-less modular design allows the

TRANSISTOR 2sC1945

Abstract: 2sc1945 2sC1945 NPN ABE 710
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES D im ensions in mm

Contextual Info: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the

RA18H1213G-101

Contextual Info: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the

transistor marking code 18W

Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to

omron plc CQM1H CPU 51 configuration

Abstract: OMRON CQM1H-CPU51 CQM1H-CPU51 programming manual OMRON CQM1 programming manual CQM1-ID212 OMRON CQM1H-CPU11 Omron CQM1H SUPPORT SOFTWARE OMRON plc programming console manual cqm1h-cpu51 CQM1-TC001 Omron CQM1H-CPU21
Contextual Info: PRODUCT OVERVIEW CQM1H Programmable Controller Features The CQM1H series programmable controller offers advanced flexibility, powerful communication options, and has features traditionally found only in full rack PLC systems. The CQM1H’s rack-less modular design allows the

RA18H1213G

Abstract: RA18H1213G-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to