TRANSISTOR 1FW 81 Search Results

TRANSISTOR 1FW 81 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 1FW 81 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1FW transistor Abstract: 1FW 14 transistor 1FW 85 transistor TRANSISTOR 1fw 25 S1F78101Y 1FW 17 transistor transistor 1FW S1F78101Y3T00 1FW 10 transistor S1F78101Y3 Contextual Info: Power Supply IC S1F78101Y Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.	Original	S1F78101Y 1FW transistor 1FW 14 transistor 1FW 85 transistor TRANSISTOR 1fw 25 S1F78101Y 1FW 17 transistor transistor 1FW S1F78101Y3T00 1FW 10 transistor S1F78101Y3	PDF
Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	23b320 BFR35AP 62702-F OT-23 T-31-17	PDF
mikroelektronik ddr Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden	OCR Scan		PDF
S1C63654 Abstract: 1FW 43 transistor S1C63000 TRANSISTOR 1fw 84 Contextual Info: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63654 Technical Manual S1C63654 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any	Original	S1C63654 S1C63654 1FW 43 transistor S1C63000 TRANSISTOR 1fw 84	PDF
PFWB2 Abstract: pfwb4 CD00 S1C63000 S1C63656 1FW 63 transistor Contextual Info: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63656 Technical Manual S1C63656 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any	Original	S1C63656 S1C63656 PFWB2 pfwb4 CD00 S1C63000 1FW 63 transistor	PDF