TX033
Abstract: westcode igbt
Text: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
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T1500TA25B
TX033TA25B)
T1500TA25B
TX033
westcode igbt
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transistor 600v 500a
Abstract: T0500NA25 D-68623 T0500 ic 90807
Text: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
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T0500NA25E
TX044NA25E)
T0500NA25E
transistor 600v 500a
T0500NA25
D-68623
T0500
ic 90807
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T0340VB
Abstract: T0340VB45G westcode igbt
Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
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T0340VB45G
VRM10V,
T0340VB45G
T0340VB
westcode igbt
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T1500TB25E
Abstract: No abstract text available
Text: Date:- 18 Feb, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250
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T1500TB25E
T1500TB25E
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T0160NB45A
Abstract: No abstract text available
Text: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
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T0160NB45A
T0160NB45A
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T0510VB45E
Abstract: No abstract text available
Text: Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0510VB45E
T0510VB45E
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T2400GB
Abstract: No abstract text available
Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800
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T2400GB45E
T2400GB45E
T2400GB
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IGBT DRIVER Analog Devices
Abstract: 300V dc to dc boost converter flash trigger transformer fly-back transformer igbt transformer driver Xenon Flash 6v 6206 voltage regulator 12 pin flyback transformer bi-directional switches IGBT fly back transformer
Text: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16
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MX881
100mA
DFN-16)
220mA)
MX881
IGBT DRIVER Analog Devices
300V dc to dc boost converter
flash trigger transformer
fly-back transformer
igbt transformer driver
Xenon Flash 6v
6206 voltage regulator
12 pin flyback transformer
bi-directional switches IGBT
fly back transformer
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T0258HF65G
Abstract: No abstract text available
Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0258HF65G
T0258HF65G
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igbt flash
Abstract: "flyback transformer" igbt xenon tube 8 pin 24v transformer xenon flash circuit CMX881
Text: IXYS MX881 Xenon Flash Controller & LED Torch Driver Features: General Description • Highly Integrated Solution that includes: Optimized Flyback Boost Converter Controller, IGBT Driver, 100mA LED Torch Driver, and Transformer Drive Transistor • Small Size 3mm x 5mm DFN-16
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MX881
MX881
100mA
igbt flash
"flyback transformer"
igbt xenon tube
8 pin 24v transformer
xenon flash circuit
CMX881
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Untitled
Abstract: No abstract text available
Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
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T0340VB45G
T0340VB45G
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Untitled
Abstract: No abstract text available
Text: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
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T0900DF65A
T0900DF65A
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Untitled
Abstract: No abstract text available
Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800
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T2400GB45E
T2400GB45E
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T1200EB45E
Abstract: No abstract text available
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T1200EB45E
T1200EB45E
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CW 7805 regulator
Abstract: cw 7805 TRANSISTOR CW 7805 resistor 1.2k 1/CW 7805
Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210901
PTF210901
CW 7805 regulator
cw 7805
TRANSISTOR CW 7805
resistor 1.2k
1/CW 7805
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IC500A
Abstract: t0800ta45e D-68623 T0800 transistor D 982
Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T0800TA45E
T0800TA45E
IC500A
D-68623
T0800
transistor D 982
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CW 7805
Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210901
PTF210901
CW 7805
CW 7805 regulator
regulator CW 7805
P10ECT-ND
CW 7805 1k
7805 datasheet
ptf21090
TRANSISTOR CW 7805
resistor* 24k ohm
PCC1772CT-ND
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CW 7805 regulator
Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805
Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210901
PTF210901
CW 7805 regulator
TRANSISTOR CW 7805
regulator CW 7805
cw 7805
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T2400GA45E
Abstract: T2400 D-68623
Text: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T2400GA45E
T2400GA45E
T2400
D-68623
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T1200EB
Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T1200EB45E
T1200EB45E
T1200EB
LA 4750 n
transistor polar
D-68623
T1200
133nF
Gate Drive Characteristics
IGBT1200A
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MJ 5030
Abstract: T0900TA52E
Text: Date:- 17 Jun, 2003 Provisional Data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0900TA52E
T0900TA52E
MJ 5030
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800EB45G
T0800EB45G
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2SK926
Abstract: No abstract text available
Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SK926 The 2SK976 is N-channel MOS Field E ffe c t Power PACKAG E D IM ENSIONS irl mil irrveiarj InchesJ Transistor designed for sw itching power supplies, DC-DC
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2SK926
2SK976
2SK926
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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O-247AC
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