TRANSISTOR 200 GHZ Search Results

Contextual Info: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.

Contextual Info: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.

MRF1001A

Abstract: high frequency transistor
Contextual Info: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C

1416-200

Contextual Info: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

Contextual Info: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.

PH1417-200S

Abstract: F 140 F140 C5 155 10 PH1417
Contextual Info: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

high frequency transistor

Contextual Info: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG Dimensions are in mm FEATURES: • POSC = 630 mW Typical at 7.5 GHz

2SC2951

Abstract: high frequency transistor
Contextual Info: 2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. PACKAGE STYLE .200 2L FLG FEATURES: • POSC = 630 mW Typical at 7.5 GHz • Omnigold Metallization System

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

QE R 643

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip

2731GN

Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

Contextual Info: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages

BPT18E01

Abstract: BPT18E02 BPT18E05
Contextual Info: BIPOLARICS, INC. Part Number BPT18E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT18E01 is a high performance silicon bipolar transistor

BPT23E01

Abstract: BPT30E01 BPT30E02 BPT30E04 bipolarics
Contextual Info: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT30E01 is a high performance silicon bipolar transistor

BPT23E01

Abstract: BPT23E02 BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ
Contextual Info: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT23E01 is a high performance silicon bipolar transistor

MSC80834

Abstract: GP 458
Contextual Info: MSC 80834 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80834 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 250 mA VCB 45 V PDISS 5.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC

S21E2

Abstract: 2SC2408 NPN RF Transistor S21E-2 RF POWER TRANSISTOR NPN RF NPN TRANSISTOR
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION •Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.

80836

Abstract: MSC80836 msc80
Contextual Info: MSC 80836 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC80836 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 700 mA VCB 45 V PDISS 17 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 8 C/W

LE50

Abstract: 2SC2408 PA33 SC-43A
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SC2408 2SC2408 is designed for High frequency Wide Band Amplifier. |S 2 1ei2 21 dB TYP. @200 MHz NF 2.4 dB TYP. @200 MHz ABSOLUTE M A X IM U M RATINGS Maximum Temperatures Storage Tem perature.