TRANSISTOR 200MA PNP Search Results

SSSMini3-F2-B

Abstract: Mini3-G3-B DSC9005 SMini3-F2-B DSA3005 DSCF005 130010 TRANSISTOR
Contextual Info: New transistor series with fine patterning process technology 50V/200mA General Transistor Series „ Overview This series is the Panasonic’s new eco-friendly 50V/200mA transistors series for general use achieved with fine patterning process technology. Added ML3 to the package lineup, this series contribute to the miniaturization of customers' products.

Contextual Info: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA

Contextual Info: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: ‧A collector current is large. ‧Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA

sot23 marking 1AM

Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
Contextual Info: BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free MMBT3906 . z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V.

Contextual Info: MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V.

Contextual Info: SEMICONDUCTOR KTA2012V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES ・A Collector Current is Large. ・Collector Saturation Voltage is low. : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. ・Complementary to KTC4072V. MAXIMUM RATING (Ta=25℃)

Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES ・A Collector Current is Large. ・Collector Saturation Voltage is low. : VCE sat ≤-250mV at IC=-200mA/IB=-10mA. ・Complementary to KTC4072E. MAXIMUM RATING (Ta=25℃)

Contextual Info: MMDT3946 COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 200 mWatts POWER FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Pb free product : Sn meet RoHS environment

MMBT3906_R2_00001

Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

MMBT3906

Abstract: MMBT3906_R1_00001 MMBT3906R
Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V

Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D G A 2 C H ᴌComplementary to KTC4072E.

1N916

Abstract: MMBT3906
Contextual Info: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives

MMDT3946

Contextual Info: MMDT3946 COMPLEMENTARY NPN / PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • Epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives

MMBT3906

Contextual Info: MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V.

Contextual Info: SEMICONDUCTOR KTA2012V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. G H A D 2 ᴌComplementary to KTC4072V.

KTA2012E

Abstract: KTC4072E
Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D H G A 2 ᴌComplementary to KTC4072E.

KTA2012E

Abstract: KTC4072E
Contextual Info: SEMICONDUCTOR KTA2012E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. FEATURES E ᴌA Collector Current is Large. B ᴌCollector Saturation Voltage is low. : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. D H G A 2 ᴌComplementary to KTC4072E.

s2A SOT23

Contextual Info: MMBT3906-AU PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm FEATURES • PNP epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = -40V 0.110(2.80) • Collector current IC = -200mA

KTA702E

Abstract: KTC802E
Contextual Info: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES -250mV at IC=-200mA/IB=-10mA. C A : VCE sat 1 6 2 5 3 4 D Complementary to KTC802E. P ) SYMBOL RATING UNIT Collector-Base Voltage

D07 15

Abstract: to-126 transistor TSB772CK TSB772 TSD882
Contextual Info: TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882

KTA702E

Abstract: KTC802E
Contextual Info: SEMICONDUCTOR KTA702E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A : VCE sat ᴪ-250mV at IC=-200mA/IB=-10mA. 1 6 2 5 3 4 D ᴌComplementary to KTC802E. P RATING UNIT Collector-Base Voltage