TRANSISTOR 2206 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

transistor tt 2206

Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

LT5817

Abstract: af200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT5817 The RF Line PNP Silicon High Frequency Transistor I t = -400 mA HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e c if ic a lly d e s ig n e d f o r C R T d r iv e r a p p lic a t io n s r e q u ir in g h ig h v o lt a g e a n d h ig h

transistor tt 2206

Abstract: TT 2206 transistor LT1817 transistor LT5817
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high

RN2206

Abstract: RN2201 RN1201 RN1206 RN2202 RN2203 RN2204 RN2205
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design

RN1204

Abstract: RN1201 RN1202 RN1203 RN1205 RN1206 RN2201 1206 transistor
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

RN1202

Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design

RN2202

Abstract: RN1201 RN1206 RN2201 RN2203 RN2204 RN2205 RN2206 transistor 2204 transistor 2206
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

RN2202

Abstract: RN2203 RN1201 RN1206 RN2201 RN2204 RN2205 RN2206 transistor 2204
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

equivalent transistor 1204

Abstract: RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 RN2201 RN1201-RN1206 1204 transistor
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

transistor 2206

Abstract: transistor 2204 RN2206 equivalent transistor rn2201
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design

Contextual Info: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1204

Abstract: RN1203 RN1206 rn1201 RN1202 RN1205 RN2201 equivalent transistor 1206
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design

3001 transistor

Abstract: transistor 2206 SRA2206M DSA003763 DSA00376337 3001 pnp
Contextual Info: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

transistor 2204

Abstract: rn2202
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

Contextual Info: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

RN1202

Abstract: ku 611 1204 transistor Transistor Bo 47 rn1206 Transistor 1204
Contextual Info: TOSHIBA RN1201-RN1206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

2N2222AUE1

Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331
Contextual Info: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

manson

Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

transistor 2204

Contextual Info: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors

SRA2206M

Contextual Info: SRA2206M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

2N2907AUE1

Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Contextual Info: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.