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    TRANSISTOR 2FC Search Results

    TRANSISTOR 2FC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2FC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2fc

    Abstract: No abstract text available
    Text: Central CMST2907A TM Semiconductor Corp. SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed


    Original     		PDF CMST2907A OT-323 150mA 500mA 100MHz 26-September 150mA, transistor 2fc

    transistor 2fc

    Abstract: CMST2907A
    Text: Central CMST2907A SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed


    Original     		PDF CMST2907A CMST2907A OT-323 150mA, transistor 2fc

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Features •       MAGX-000245-014000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-000245-014000

    transistor 2fc

    Abstract: No abstract text available
    Text: CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed


    Original     		PDF CMST2907A OT-323 150mA, transistor 2fc

    CMST2907A

    Abstract: No abstract text available
    Text: CMST2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed


    Original     		PDF CMST2907A OT-323 150mA, CMST2907A

    pulse generator MC14001

    Abstract: MC14001 LM005 MC14001 MOTOROLA AN569 IRFPG50 4I501 DS3823
    Text: Order this data sheet by MTH6N100/D , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS . These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators,


    Original     		PDF MTH6N100/D IRFPG50 O-218AC MC14001 MK145BP, pulse generator MC14001 MC14001 LM005 MC14001 MOTOROLA AN569 IRFPG50 4I501 DS3823

    Untitled

    Abstract: No abstract text available
    Text: <s/\ £U7 £Pioc/uc£i, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 RF POWER TRANSISTORS 2N4440 Silicon N-P-N Overlay Transistor Fnturm: For Class A, B, or C VHF/UHF • S W output min. at 400 MHz


    Original     		PDF 2N4440 200MHI

    66a hall sensor

    Abstract: No abstract text available
    Text: NJW4302 THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage


    Original     		PDF NJW4302 NJW4302 NJW4302FA1 66a hall sensor

    NJW4302

    Abstract: QFP44 motor driver NJM4302 NJW4302FA1 QFP44 shunt resistor current motor capacitor 100 microfarad 50v 47 microfarad capacitor 4.7 microfarad capacitor
    Text: NJW4302 THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage


    Original     		PDF NJW4302 NJW4302 NJW4302FA1 QFP44 motor driver NJM4302 NJW4302FA1 QFP44 shunt resistor current motor capacitor 100 microfarad 50v 47 microfarad capacitor 4.7 microfarad capacitor

    QFP44 motor driver

    Abstract: NJM4302 NJW4302 NJW4302FA1 QFP44 ir cut filter driver ic
    Text: NJW4302 Preliminary THREE-PHASE DC BRUSHLESS MOTOR CONTROL IC • GENERAL DESCRIPTION The NJW4302 is a three-phase DC brushless motor pre-driver IC for precision applications. The NJW4302 consists of PWM driver, motor velocity control, FG Frequency Generator output, and voltage


    Original     		PDF NJW4302 NJW4302 NJW4302FA1 QFP44 motor driver NJM4302 NJW4302FA1 QFP44 ir cut filter driver ic

    MSMD022P1C

    Abstract: FPG-C32T2 panaterm setup software
    Text: Motion Control Solutions Minas A4/A4N/E Servo Drives/FP-Series PLCs 04/2008 Panasonic Motion Control Solutions Overview FP-SERIES PLCs A MINAS A4 /A4N/A4P/E SERIES SERVO DRIVES B SOFTWARE Control Configurator PM 2008 2008 Panasonic Panasonic Electric Electric Works


    Original     		PDF RM1205-9, MSMD022P1C FPG-C32T2 panaterm setup software

    sled motor

    Abstract: 4851-4 EN4851 2Sc3650 equivalent block diagram of VCD and its functions SB07-03C servo iai sanyo sled
    Text: Ordering number : EN4851 Monolithic Digital IC LB8107M Portable CD Player Actuator Driver Overview Package Dimensions The LB8107M is a portable CD player mechanism actuator driver. It operates on a 2.4 V power supply, which corresponds to two rechargeable Ni-Cd cells.


    Original     		PDF EN4851 LB8107M LB8107M 3148-QFP44MA LB8107M] LB81se: sled motor 4851-4 EN4851 2Sc3650 equivalent block diagram of VCD and its functions SB07-03C servo iai sanyo sled

    sot-323 Marking LG

    Abstract: 2FC 495 MARKING CODE c26
    Text: Central" CMST2907A Semiconductor Corp. SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed


    OCR Scan     		PDF CMST2907A OT-323 150mA, 15OmA, OT-323 sot-323 Marking LG 2FC 495 MARKING CODE c26

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed


    OCR Scan     		PDF CMST2907A OT-323 150mA, 150mAt 150mA- OT-323

    2SD1947A

    Abstract: No abstract text available
    Text: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS r • • High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE ( s a t ) = 0.3V (Max.) (IC = 5A)


    OCR Scan     		PDF 2SD1947A 2SD1947A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C01 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 7 f m • ■ F 11 m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1 +0.1 • Small Package (Dual Type) • High Voltage and High Current : VCE0 = 50V, IC = 150mA (MAX.)


    OCR Scan     		PDF HN2C01 150mA 961001EAA2'

    d3055

    Abstract: u3055 18-0IT
    Text: CED3055L5/CEU3055L5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 5 5 V , 8 A , R d s on =1 50m Q @ Vgs=1 0V. R d s (on )=1 80m Q @ Vgs=5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		PDF CED3055L5/CEU3055L5 180itiQ O-251 O-252 to-252aa to-251 D3055L5/C U3055L5 d3055 u3055 18-0IT

    CEM9410A

    Abstract: B250P ID73
    Text: M a rc h 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 .3 A , RDS ON =28mQ @ V g s =1 0V. Rds(on)=42itiQ @V gs=4.5V. D D D • Super high dense cell design for extremely low R ds (on ). • High power and current handing capability.


    OCR Scan     		PDF 28ITIQ CEM9410A yf-90% CEM9410A B250P ID73

    sot21

    Abstract: No abstract text available
    Text: July 1997 g A J R g H ty O S E M IC O N D U C T O R tm FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		PDF FDC6304P sot21

    smd code book transistor

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
    Text: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package


    OCR Scan     		PDF OT-223 Q62702-S653 E6327 fiS35bG5 D133777 SQT-89 O-92-E6288 smd code book transistor TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO

    pmi OP97

    Abstract: pmi op27 HQ19 pml 003 am PMI OP44 PMI OP AMP PMI OP 15 LM394BN 2N4124 SSM-2210
    Text: ANALOG DEVICES/ Pill DIV 2LE D pm! • 0ölböG5 GOQÖIÖ? 1 ■ 'r ' 4 3 ^ S S M -2210 AUDIO DUAL MATCHED NPN TRANSISTOR s P re c is io n M o n o lit h ic s In c. FEATURES • Very Low Voltage N o ise @ 100Hz, 1n V/VRz MAX • Excellent Current Gain M a tc h .0.5% TYP


    OCR Scan     		PDF SSM-2210 200nV 03nV/Â 200MHz LM394BN/CN SSM-2210 pmi OP97 pmi op27 HQ19 pml 003 am PMI OP44 PMI OP AMP PMI OP 15 LM394BN 2N4124

    Untitled

    Abstract: No abstract text available
    Text: A N A L O G D E V I C E S / PM I DIV pmi 2fc>E D • OölböG5 G0GÖ1Ö7 =1 ■ T M -h -is a » * 0? Precision Monolithics Inc. Very Low Voltage N o ise @ 100Hz, 1nV/VRz MAX Excellent Current Gain M a tc h .0.5% TYP Tight VBE Match Vog) . 200rV MAX


    OCR Scan     		PDF 100Hz, 200rV 03nV/Â 200MHz LM394BN/CN TheSSM-2210is SSM-2210

    2chj

    Abstract: BA6790FP
    Text: BA6790DFP B A 6 7 9 0 FP c d t v — v m 'ì n - v = 7 'f / < Power driver for CD player • ii-Jfé'+ìiH/Dim entions Unit : mm BA6790FP«, C D ^ U — Ì- ? iES!)ffl4chAU BTL K v •f^ 'C T o 5VU- +' i l U— ifl, 2fcHSOP28PirV\°-;/^v £ S f f l L T l'Z tz S t) , -b-y


    OCR Scan     		PDF BA6790DFP BA6790FP« 2fcHSOP28PirV\ BA6790FP HSOP28pin 50mmx50mmv 2chj

    CA3031

    Abstract: CA3005 or CA3006 inverted welding machine schematic diagram .1microfarad capacitor transistor bf 175 RCA Transistors CA3034V1 RCA transistor CA3005 CA3004
    Text: This Manual, like its preceding edition, has been prepared to provide an understanding of the basic princi­ ples involved in the design and application of linear integrated circuits. It may be used as a guide by circuit and systems designers in determining optimum design


    OCR Scan     		PDF