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    TRANSISTOR 2N06L35 Search Results

    TRANSISTOR 2N06L35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N06L35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N06L35

    Abstract: 68w smd transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 35 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD26N06S2L-35


    Original     		PDF SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2N06L35 68w smd transistor 2N06L35 BSPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode

    2n06l35

    Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD26N06S2L-35 PG-TO252-3-11 2N06L35 2n06l35 transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a

    2N06L35

    Abstract: No abstract text available
    Text: IPG20N06S2L-35A OptiMOS Power-Transistor Product Summary VDS 55 V RDS on ,max4) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-35A PG-TDSON-8-10 2N06L35 2N06L35

    2N06L35

    Abstract: 68w smd 2N06L Q67060-S7426 smd 68W
    Text: SPD26N06S2L-35 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 35 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD26N06S2L-35 Package Ordering Code


    Original     		PDF SPD26N06S2L-35 SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, 2N06L35 68w smd 2N06L Q67060-S7426 smd 68W

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD26N06S2L-35 PG-TO252-3-11 2N06L35 726-IPD26N06S2L-35 2N06L35 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3

    2n06l35

    Abstract: transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 SPD26N06S2L-35
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35


    Original     		PDF SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2n06l35 transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252

    IPG20N06S2L-35

    Abstract: 2N06L35 transistor 2N06L35 IPG20N06S2L-35 application note PG-TDSON-8-4 DD44
    Text: IPG20N06S2L-35 OptiMOS Power-Transistor Product Summary V DS 55 V R DS on ,max4) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-35 2N06L35 IPG20N06S2L-35 2N06L35 transistor 2N06L35 IPG20N06S2L-35 application note PG-TDSON-8-4 DD44

    2N06L35

    Abstract: P-TO252-3-11 transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 26APulsed PTO252-3-11 2N06L3
    Text: SPD26N06S2L-35 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 26 A P-TO-252-3-11 P-TO252-3-11 Type Package


    Original     		PDF SPD26N06S2L-35 P-TO-252-3-11 P-TO252-3-11 P-TO-252-3-11 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2N06L35 P-TO252-3-11 transistor 2N06L35 BSPD26N06S2L-35 26APulsed PTO252-3-11 2N06L3