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    TRANSISTOR 2N60 Search Results

    TRANSISTOR 2N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6055

    Abstract: No abstract text available
    Text: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6055 2N6055 com/2n6055

    2N6056

    Abstract: ALL SILICON COMPLEMENTARY transistors darlington
    Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6056 2N6056 com/2n6056 ALL SILICON COMPLEMENTARY transistors darlington

    2n6027

    Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


    Original     		PDF 2N6027, 2N6028 2N6027/D 2n6027 PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note

    2N6028 Application Note

    Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


    Original     		PDF 2N6027, 2N6028 10igure 2N6028 2N6028RLRA 2N6027RL1 2N6028 Application Note 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028

    2n6027

    Abstract: equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027 pin diagram 2N6028 Application Note 2N6028 unijunction application note 2N6027 PBFREE
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


    Original     		PDF 2N6027, 2N6028 2N6027/D 2n6027 equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027 pin diagram 2N6028 Application Note 2N6028 unijunction application note 2N6027 PBFREE

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two


    Original     		PDF 2N6027, 2N6028 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527

    Untitled

    Abstract: No abstract text available
    Text: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR


    Original     		PDF 2N6049 2N30S4A 300fll,

    transistor 725

    Abstract: 2N6058
    Text: 2N6058 80 V - Darlington Complementary NPN Selicon Power Transistor 7.25 Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6058 Online Store 2N6058 Diodes 80 V - Darlington Complementary N PN Selicon Power Transistors Transistor Integrated Circuits


    Original     		PDF 2N6058 2N6058 com/2n6058 transistor 725

    2N6056

    Abstract: 1N5825 MSD6100
    Text: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —


    Original     		PDF 2N6056 r14525 2N6056/D 2N6056 1N5825 MSD6100

    1N5825

    Abstract: 2N6056 MSD6100
    Text: 2N6056 NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — • • http://onsemi.com hFE = 3000 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6056 2N6056/D 1N5825 2N6056 MSD6100

    2n6031

    Abstract: No abstract text available
    Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.


    Original     		PDF 2N6031 200mA 500kHz 100kHz 27-August

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse


    Original     		PDF 2N6027, 2N6028 r14525 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    equivalent transistor of 2n6027

    Abstract: 2N6027 2n6028 PUT 2N6027 transistor put 2n6028 PUT Oscillator 2n6027 unijunction 2N5270 2N6027RL1 2N6028RLRA
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse


    Original     		PDF 2N6027, 2N6028 r14525 2N6027/D equivalent transistor of 2n6027 2N6027 2n6028 PUT 2N6027 transistor put 2n6028 PUT Oscillator 2n6027 unijunction 2N5270 2N6027RL1 2N6028RLRA

    2N6027

    Abstract: equivalent transistor of 2n6027 2N6028 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028
    Text: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse


    Original     		PDF 2N6027, 2N6028 2N6027 2N6028 2N6028RLRA equivalent transistor of 2n6027 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028

    2N6027

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N6027 SCR PROGRAMMABLE UNIJUNCTION TRANSISTOR  DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and


    Original     		PDF 2N6027 2N6027 2N6027L-T92-B 2N6027L-T92-K 2N6027G-AB3-R QW-R301-022

    Untitled

    Abstract: No abstract text available
    Text: 2N6058 and 2N6059 Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV


    Original     		PDF 2N6058 2N6059 MIL-PRF-19500/502 O-204AA O-204AA T4-LDS-0307,

    2N6079

    Abstract: No abstract text available
    Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6079 2N6079 com/2n6079

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2


    OCR Scan     		PDF 2N6044 2N6044 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2N6044 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE T0-220AB DIMENSIONS mm min MAXIMUM RATINGS 8.O A le 1e A PEAK inches


    OCR Scan     		PDF 2N6044 T0-220AB

    2n5088

    Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N5088/5089 2N5088 2N6088: 625mW 2N5089 2N50S8 2N5089 2N5088 2n6088 transistor 2N5088 2n5088 transistor 2N608

    Untitled

    Abstract: No abstract text available
    Text: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C


    OCR Scan     		PDF 2N6038 O-126 15OOO

    2n6080

    Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
    Text: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily


    OCR Scan     		PDF 2N6080 2N6081 N6082 2N6083 N6084 250mA 100mA 200mHz 175mHz, 2N6084 2N6082 Thomson-CSF