Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SA143 Search Results

    TRANSISTOR 2SA143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA143 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1438

    Abstract: No abstract text available
    Text: Ordering number : EN 1857B PNP Epitaxial Planar Silicon Transistor 2SA1438 High hFE, Low-Frequency General-Purpose Amp Applications


    Original     		PDF 1857B 2SA1438 2SA1438

    800-1200MHZ

    Abstract: 2SA1434 marking fl VEBO-15V
    Text: Ordering number:EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018A [2SA1434]


    Original     		PDF EN1853A 2SA1434 2SA1434] 2SA1434-used VEBO15V) 800-1200MHZ 2SA1434 marking fl VEBO-15V

    2SA1435

    Abstract: ITR03602 ITR03603 ITR03604 ITR03605 ITR03606
    Text: Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0


    Original     		PDF ENN1856A 2SA1435 2003B 2SA1435] VEBO15V) 2SA1435 ITR03602 ITR03603 ITR03604 ITR03605 ITR03606

    2SA1435

    Abstract: ITR03602 ITR03603 ITR03604 ITR03605
    Text: Ordering number:ENN1856B PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003B [2SA1435] Features 5.0 4.0 4.0


    Original     		PDF ENN1856B 2SA1435 2003B 2SA1435] VEBO15V) 2SA1435 ITR03602 ITR03603 ITR03604 ITR03605

    2SA1433

    Abstract: No abstract text available
    Text: Ordering number:ENN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.


    Original     		PDF ENN3471 2SA1433 2006B 2SA1433] 2SA1433

    EN3471

    Abstract: 2SA1433
    Text: Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions • High fT Gain-Bandwidth Product . · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process.


    Original     		PDF EN3471 2SA1433 2SA1433] SC-51 EN3471 2SA1433

    2SA1433

    Abstract: ITR03587
    Text: 2SA1433 Ordering number : ENN3471A SANYO Semiconductors DATA SHEET 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF).


    Original     		PDF 2SA1433 ENN3471A 2SA1433 ITR03587

    2SA1435

    Abstract: VEBO-15V
    Text: Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2003A [2SA1435] Features · Adoption of MBIT process.


    Original     		PDF EN1856A 2SA1435 2SA1435] VEBO15V) SC-43 2SA1435 VEBO-15V

    Untitled

    Abstract: No abstract text available
    Text: 2SA1433 Ordering number : ENN3471A 2SA1433 PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • • • High fT Gain-Bandwidth Product . Small reverse transfer capacitance (Cre=1.3pF). Adoption of FBET process. Specifications


    Original     		PDF 2SA1433 ENN3471A

    2-7D101A

    Abstract: 2SA1432 2SC3672 A1432 nixie tube driver 2sc367
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


    Original     		PDF 2SA1432 2SC3672 2-7D101A 2SA1432 2SC3672 A1432 nixie tube driver 2sc367

    2SA1432

    Abstract: 2-7D101A 2SC3672 A1432
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


    Original     		PDF 2SA1432 2SC3672 2SA1432 2-7D101A 2SC3672 A1432

    2SA1437

    Abstract: ITR03622 ITR03623 ITR03624
    Text: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made


    Original     		PDF ENN2524A 2SA1437 2003B 2SA1437] VCEO100V) VEBO15V) 2SA1437 ITR03622 ITR03623 ITR03624

    2SA1437

    Abstract: ITR03622 ITR03623 ITR03624
    Text: Ordering number:ENN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1437] · Ultrasmall-sized package permitting sets to be made


    Original     		PDF ENN2524A 2SA1437 2003B 2SA1437] VCEO100V) VEBO15V) 2SA1437 ITR03622 ITR03623 ITR03624

    A-1432

    Abstract: 2SA1432
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


    Original     		PDF 2SA1432 2SC3672 A-1432 2SA1432

    2sa143

    Abstract: 2SA1437 VEBO-15V
    Text: Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1437] · Very small-sized package permitting sets to be made


    Original     		PDF EN2524A 2SA1437 2SA1437] VCEO100V) VEBO15V) SC-43 2sa143 2SA1437 VEBO-15V

    2SA1434

    Abstract: ITR03593 ITR03594 ITR03595 ITR03596
    Text: Ordering number:ENN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuits. unit:mm 2018B · Ultrasmall-sized package permitting 2SA1434-used


    Original     		PDF ENN1853A 2SA1434 2018B 2SA1434-used VEBO15V) 2SA1434] 2SA1434 ITR03593 ITR03594 ITR03595 ITR03596

    2SA1436

    Abstract: ITR03612 ITR03613 ITR03614 ITR03615
    Text: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .


    Original     		PDF ENN2456 2SA1436 2003B 2SA1436] VEBO15V) 2SA1436 ITR03612 ITR03613 ITR03614 ITR03615

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    EN3471

    Abstract: 2SA1433
    Text: Ordering number:EN 3471 _ 2SA1433 No.3471 r PNP Epitaxial Planar Silicon Transistor High-Definition CRT Display Applications Features • High fx Gain-Bandwidth Product •Small reverse transfer capacitance (cre = 1.3pF) • Adoption of FBET process


    OCR Scan     		PDF 2SA1433 EN3471 2SA1433

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SA1438

    Abstract: 71ti 2sa143 nhp relay SC-51
    Text: Ordering number: EN 1857B 2SA1438 N0.1857B PNP Epitaxial P lanar Silicon Transistor SAiYO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process


    OCR Scan     		PDF 1857B l857B 2SA1438 ebo-15v> SC-43 2SA1438 71ti 2sa143 nhp relay SC-51

    2SA1437

    Abstract: No abstract text available
    Text: Ordering number: EN 2524A _ N0.2524A 2SA1437 PNP Epitaxial Planar Silicon Transistor i High-hjTE, A F Amp Applications Applications . AF amp, various drivers, muting circuit Features . Very small-sized package permitting sets to be made smaller and slimmer,


    OCR Scan     		PDF 2SA1437

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200


    OCR Scan     		PDF 2SA1436 VEBOi15V)