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    TRANSISTOR 2SC1008 Search Results

    TRANSISTOR 2SC1008 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC1008 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1008

    Abstract: TRANSISTOR 2sc1008
    Text: PST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1008 2SC1008 TRANSISTOR 2sc1008

    Untitled

    Abstract: No abstract text available
    Text: 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1008 500mA,

    2SC1008

    Abstract: TRANSISTOR 2sc1008 st2sc1008 ic CD4081 pin diagram datasheet
    Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1008 2SC1008 TRANSISTOR 2sc1008 st2sc1008 ic CD4081 pin diagram datasheet

    2SC1008

    Abstract: No abstract text available
    Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1008 2SC1008

    2SC1008

    Abstract: TRANSISTOR 2sc1008
    Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1008 2SC1008 TRANSISTOR 2sc1008

    2SC1008

    Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
    Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package


    Original     		PDF 2SC1008 2SC1008 2SC1008 equivalent TRANSISTOR 2sc1008

    2SC1008

    Abstract: 2SC1008Y TRANSISTOR 2sc1008 2SC1008-Y 2SC1008 equivalent 2sc1008y transistor 2SC1008G 2SC1008-G
    Text: 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Switching and Amplification. G H Emitter Base Collector


    Original     		PDF 2SC1008 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G 14-Feb-2011 500mA, 2SC1008 2SC1008Y TRANSISTOR 2sc1008 2SC1008 equivalent 2sc1008y transistor 2SC1008G 2SC1008-G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1008 TRANSISTOR NPN 1. EMITTER 2. BASE FEATURES z General Purpose Switching and Amplification 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC1008 500mA

    2SC1008

    Abstract: TRANSISTOR 2sc1008 NPN transistor 500ma TO-92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80


    Original     		PDF 2SC1008 500mA, 2SC1008 TRANSISTOR 2sc1008 NPN transistor 500ma TO-92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃） Collector current ICM : 0.7 A Collector-base voltage V BR CBO : 80


    Original     		PDF 2SC1008 270TYP 050TYP

    2SC1008

    Abstract: No abstract text available
    Text: WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units VCBO ICM PCM TJ Tstg 80 0.7 0.8 -55 to +150 -55 to +150 V A W °C °C


    Original     		PDF 2SC1008 15-Feb-2011 270TYP 2SC1008

    2SC1008

    Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
    Text: 2SC1008 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC1008 500mA, 2SC1008 2SC1008 equivalent TRANSISTOR 2sc1008

    2SC1008

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 2SC1008 500mA, 2SC1008

    2SC1008

    Abstract: No abstract text available
    Text: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR（NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W（Tamb=25℃）


    Original     		PDF 2SC1008 O--92 270TYP 050TYP 2SC1008

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G C1008

    transistor c1008

    Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 npn c1008 2SC1008Y 2SC1008-Y
    Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G C1008 10mAdc, transistor c1008 c1008 transistor 2SC1008 C1008 Y npn transistor c1008 npn c1008 2SC1008Y

    transistor c1008

    Abstract: c1008 transistor npn transistor c1008 2sc1008 C1008 Y TRANSISTOR 2sc1008
    Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G C1008 10mAdc, 100uAdc, transistor c1008 c1008 transistor npn transistor c1008 2sc1008 C1008 Y TRANSISTOR 2sc1008

    transistor c1008

    Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 2SC1008Y 2SC1008-O TRANSISTOR 2sc1008 npn c1008
    Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G C1008 10mAdc, 100uAdc, transistor c1008 c1008 transistor 2SC1008 C1008 Y npn transistor c1008 2SC1008Y TRANSISTOR 2sc1008 npn c1008

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1008 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R M E D IU M S P E E D S W IT C H IN G * * * * Package: TO-92 Complement to 2SA708 High Collector-Base Voltage VCBO=80V


    OCR Scan     		PDF 2SC1008 2SA708 700mA 800mW 100uA 500mA

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2SC1008

    Abstract: 2SC1008A TRANSISTOR 2sc1008 160 e7 L008A
    Text: 2SC1008, 1008A 2SC1008, 1008A b ÿ ' s i / Z ÿ / N P N SILICON EPITAXIAL TRANSISTOR npn t p îÈ IÊ X 'i Lo w Frequency A m p lifie r, M edium Speed S w itch in g i f i l H f f l / l n d u s t r i a l U se J: V , • t 'iS S X 4 -, f - v / f f l £ L 2SC1008, 1008A Ü , Æ M & ü 'f i f c


    OCR Scan     		PDF 2SC1008, 2SC1008 2SC1008A 2SC1008) 2SC1008A) 160TYP. 120TYP. TRANSISTOR 2sc1008 160 e7 L008A

    2SC1116A

    Abstract: transistor 431A transistor tl 431A h a 431a transistor 2SC1619A 2SA119 2SC1008A 2SC16 2SC1517A SI 7300
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SCU03A 2SC1116A tc-25t 2SC1619A 100MHz, 2SC1775A transistor 431A transistor tl 431A h a 431a transistor 2SA119 2SC1008A 2SC16 2SC1517A SI 7300