TRANSISTOR 2SC2216 Search Results

TRANSISTOR 2SC2216 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR 2SC2216 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units	Original	2SC2216 30MHz	PDF
transistor F45 Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C	Original	2SC2216 100uA 30MHz 30MHz 45MHz transistor F45	PDF
2SC2216 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	2SC2216 30MHz 2SC2216	PDF
2SC2216 Abstract: 2SC2717 Contextual Info: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage	Original	2SC2216 2SC2717 2SC2216 SC-43 2SC2717	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR（ NPN ） TO— 92 FEATURES Power dissipation PCM: 300m W（Tamb=25℃） Collector current ICM: 50m A Collector-base voltage	Original	2SC2216 270TYP 050TYP	PDF
2SC2216 Abstract: 2sc221 Contextual Info: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B	Original	2SC2216 17-Feb-2011 30MHz 2SC2216 2sc221	PDF
Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER	Original	2SC2216	PDF
2SC2216 Abstract: 2SC2717 Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC2216 2SC2717 2SC2216, 45MHz) SC-43	PDF
2SC2216 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range	Original	2SC2216 O--92 2SC2216	PDF
2sc2717 Abstract: 2sc2216 Contextual Info: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2SC2216 2SC2717 2SC2216f 45MHz) 2SC2717 SC-43	PDF
2216 Abstract: 2SC2216 2SC2717 Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)	OCR Scan	2SC2216 2SC2717 2SC2216, SC-43 2216 2SC2717	PDF
2SC2216 Abstract: IB15 Contextual Info: 2SC2216 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃	Original	2SC2216 O--92 2SC2216 IB15	PDF
DC 0509 C Abstract: transistor 2sc2216 2SC2216 Contextual Info: 2SC2216,2SC2717 TO SHIBA 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. &1M AX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hjrE. • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 DC 0509 C transistor 2sc2216	PDF

2SC2216 Abstract: 2SC2717 Contextual Info: TOSHIBA 2SC2216.2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. U n i t in m m a iM A X . High Gain : Gpe = 33dB Typ. (f=45MHz) • Good Linearity of hEE. 0.45 F Oì\ X öl ^ O 0.45	OCR Scan	2SC2216 2SC2717 2SC2216, 45MHz) SC-43 2SC2717	PDF
2SC2216 Abstract: transistor u transistor 2717 Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent	OCR Scan	2SC2216/2717 2SC2216 2SC2717 2SC2717 transistor u transistor 2717	PDF
transistor cross reference Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER	Original	OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent	PDF
2SC2216 Contextual Info: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC	Original	2SC2216 300mWatts -55OC 100uAdc, 50Vdc, 15mAdc, 100MHz) 2SC2216	PDF
Transistor C2216 Abstract: C2216 C2216 transistor Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V	Original	2SC2216 300mWatts -55OC C2216 10mAdc, 100uAdc, 50Vdc, Transistor C2216 C2216 C2216 transistor	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2SC2216 -55OC 10mAdc, 100uAdc, 50Vdc,	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2SC2216 -55OC 10mAdc, 100uAdc,	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2SC2216 -55OC 10mAdc, 100uAdc	PDF
transistor 2sc2216 Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2SC2216 -55OC 10mAdc, 100uAdc, transistor 2sc2216	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2SC2216 -55OC	PDF

TRANSISTOR 2SC2216 Search Results

TRANSISTOR 2SC2216 Result Highlights (5)

TRANSISTOR 2SC2216 Datasheets Context Search

y51 h 120c

transistor F45

2SC2216

2SC2216

2SC2216

2SC2216

2SC2216

2sc2717

2216

2SC2216

DC 0509 C

2SC2216

2SC2216

transistor cross reference

2SC2216

Transistor C2216

transistor 2sc2216