TRANSISTOR 2SC2459 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC2459

Abstract: 2SA1049 2SC245 01OL
Contextual Info: TO SHIBA 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 AUDIO AM PLIFIER APPLICATIONS Unit in mm 4.2M AX. • High Breakdown Voltage : V ç;e O = 120V (Min.) • High DC Current Gain : hjnE = 200~700 • Excellent hjpg Linearity

2SC2459

Abstract: transistor 2sc2459 2SA1049
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SA1049

Abstract: 2SC2459 transistor 2sc2459
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2459

Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

transistor 2sc2459

Abstract: 2SC2459
Contextual Info: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)

2SC2459

Abstract: 2SA1049
Contextual Info: T O S H IB A 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 AUDIO AMPLIFIER APPLICATIONS Unit in mm 4.2M AX. • High Breakdown Voltage : V çje O = 120 V (Max.) • High : hjpg — 200~ 700 • Excellent hjpg Linearity . DC Current Gain

transistor 2sc2459

Abstract: 2SC2459
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR 2SC2459 T n C U ID A • w w ■ II TECHNICAL DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2459) AUDIO AMPLIFIER APPLICATIONS • High Breakdown Voltage : V(Je q = 120V (Min.) • High DC C urrent Gain : h;pE = 200~700

2SA1049

Abstract: 2SC2459
Contextual Info: TO SH IB A 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm AUDIO AM PLIFIER APPLICATIONS 4.2M AX. High Breakdown Voltage : V q e q = 120V (Min.) High DC Current Gain : h j P E = 200~700 Excellent hpE Linearity : h p E ( I = 0.1mA) / h j r g ( I = 2mA) = 0.95 (Typ.)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

2SA1049

Abstract: 2SC2459
Contextual Info: TOSHIBA 2SA1049 2 S A 1 049 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. Small Package. High Breakdown Voltage : VCEO= —120V (Min.) High hjpg : hjrE = 200~700 Excellent hjpg Linearity

hjr 1

Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1049 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1049) AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm 4.2MAX. Small Package. High Breakdown Voltage : V q e q = —120V (Min.) High iiFE

A1049

Abstract: 2SA1049 2SC2459
Contextual Info: TOSHIBA 2SA1049 2 S A 1 049 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • 4.2M AX. Small Package. High Breakdown Voltage : V^EO = —120 V High hjpg : hjpg = 200~ 700 Excellent hjpg Linearity

2SA1049

Abstract: 2SC2459
Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SA1049

Abstract: transistor 2SA1049 2SC2459
Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. · High breakdown voltage: VCEO = −120 V · High hFE: hFE = 200~700 · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SA1049

Abstract: 2SC2459
Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SA1049

Abstract: 2SC2459
Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

A1049

Abstract: TRANSISTOR A1049 2SC2459 A1049 transistor
Contextual Info: 2 SA 1049 TO SH IB A 2 S A 1 049 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY AM PLIFIER APPLICATIONS Small Package. High Breakdown Voltage : V0EO = —120V (Min.) High hpE : hjnE = 200~700 Excellent hpg Linearity : hpE (IC= -0.1m A )/h p E (I(]= -2m A ) = 0.95 (Typ.)

Contextual Info: 2SA1049 T O SH IB A 2 S A 1 049 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . Small Package. High Breakdown Voltage : VCEO= —120V (Min.) High hpE : hpE = 200~700 Excellent hpg Linearity

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.