TRANSISTOR 2SC3356 Search Results

2SC3356

Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

transistor NEC D 588

Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

2SC3356 s2p

Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES

nec 2561

Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to

NEC 2561

Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.

2SC3356-T1B-A

Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
Contextual Info: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

Contextual Info: SILICO N TR A N SISTO R 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise in m illim eter* amplifier at V H F, U H F and C A T V band.

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

2SC3356 s2p

Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

GE 2646

Abstract: 2SC3356 r25 CD/GE S 2646
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.

016p

Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

2SC3356 Application Note

Abstract: 2SC3356 Inductive Load Driver Buzzers F10G 2SC3356-L 4S212
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

UTC LCD Driver

Abstract: 2sc3356
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.

marking r25

Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Contextual Info: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER