TRANSISTOR 2SC373 Search Results

D1714

Abstract: marking ok 2SA1460 2SC3736
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC3736 is designed for power amplifier and high speed 4.5 ±0.1 switching applications. 1.6 ±0.2 1.5 ±0.1

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

2SC3735

Abstract: hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3735 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.8±0.2 +0.1 0.4 –0.05 • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance

2SC3736

Abstract: 2SA1460 IEI-1213 MEI-1202 MF-1134 nec marking power amplifier marking HFF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3736 is designed for power amplifier and high speed switching applications. in millim eters FEATURES • High speed, high voltage switching.

Contextual Info: / NEC ELECTRON DEVICE SILICON TRANSISTOR / 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed: t stfl < 200 rts • C om plem entary to 2SA1461 ABSOLUTE M AXIM UM RATINGS

TCA 975

Abstract: 2SC3739 transistor Y7
Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3739 M HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2.8 ± 0 2 • High Gain Bandwidth Product: f j = 200 MHz MIN. • Complementary to 2SA1464

MARKING B24

Abstract: 2SA1461 2SC3734 Marking B23 vqb 201
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters 2.8 ±0.2 • High Speed: t stg < 200 ns • Complementary to 2SA1461 0.65 ±8:3 1.5 ABSOLUTE MAXIMUM RATINGS

lkt 108

Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

ge330

Contextual Info: SILICON TRANSISTOR 2SC3739 HIGH FREQUENCY AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim e te rs • High G ain B a ndw idth P rodu ct: f-f- = 200 M H z M IN . • C om plem entary to 2S A 1464

Contextual Info: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR 2SC3736 HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP TIO N PACK AG E D IM E N S IO N S The 2SC3736 is designed fo r pow er a m p lifie r and high speed s w itch ing appiications.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

Contextual Info: SILICON TRANSISTOR 2SA1462 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimaters • High Speed Switching : \on =9.0 m TYP. toff = 19.0 ns TYP. • High fr : *t “ 1 800 MHz TYP. • LowCob :Cob = 2 .0pFTYP.

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

2SC3735

Contextual Info: NEC ELECTRON DEVICE / / SILICON TRANSISTOR - _ _ _ . _ _ 2S A 1462 HIGH SPEED SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2 - 8 ± Q -2 _ :_ 1.5 om t E3 -b i • High Speed Switching : t o n ^9 .0 n s TYP.