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    TRANSISTOR 2SD Search Results

    TRANSISTOR 2SD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 620

    Abstract: 2SD1582 hFE transistor high hfe transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is


    Original     		PDF 2SD1582 2SD1582 nec 620 hFE transistor high hfe transistor

    2SD1581

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is


    Original     		PDF 2SD1581 2SD1581

    D1615

    Abstract: transistor ab2 12
    Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		PDF 2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12

    2SD2402

    Abstract: transistor 2sD2402 Transistor Marking EY
    Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		PDF 2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		PDF 2SD2403 2SD2403 2SB1572

    NEC RELAY

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


    Original     		PDF 2SD2163 2SD2163 NEC RELAY

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2SD560

    Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is


    Original     		PDF 2SD560 2SD560 O-220AB O-220AB) nec 2sd560 2sd560 equivalent NEC RELAY

    2SD2161

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		PDF 2SD2161 2SD2161 O-220 O-220)

    2SD2165

    Abstract: NEC marking b
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


    Original     		PDF 2SD2165 2SD2165 NEC marking b

    2SD2164

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


    Original     		PDF 2SD2164 2SD2164

    2SD2165

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


    Original     		PDF 2SD2165 2SD2165

    D1486

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and


    Original     		PDF 2SD2162 2SD2162 O-220 O-220) D1486

    2SD2165

    Abstract: nec transistor Transistor NEC 30
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and


    Original     		PDF 2SD2165 2SD2165 nec transistor Transistor NEC 30

    Untitled

    Abstract: No abstract text available
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		PDF IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz

    NEC semiconductor

    Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.


    Original     		PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E

    2SD2674

    Abstract: RB461F US5L10 TUMT5 marking code L10
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 85Max. 15Max. US5L10 TUMT5 marking code L10

    TUMT5

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. TUMT5

    Untitled

    Abstract: No abstract text available
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1705 2SD2670

    Untitled

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. 1000m

    "marking code" Z04

    Abstract: 2SD2671 marking z04 2SB1706 marking code Z04 Z04 MARKING
    Text: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1706 2SD2671 "marking code" Z04 marking z04 marking code Z04 Z04 MARKING

    2SD2670

    Abstract: marking code z03 2SB1705
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1705 2SD2670 marking code z03

    C11531E

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING UNIT: mm The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage.


    Original     		PDF 2SD2383 2SD2383 C11531E) C11531E

    318M

    Abstract: No abstract text available
    Text: SEC TENTATIVE SPECIFICATION SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1162 V443 HIGH VOLTAGE HIGH CURRENT SW ITCHING NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r transistor ignitor and m otor driver applications.


    OCR Scan     		PDF 2SD1162 318M