y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2SD2615
Abstract: 2SB1674
Contextual Info: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.
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2SD2615
2SB1674.
100ms
2K-20K
10MHz
2SD2615
2SB1674
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2SD2618
Abstract: 2SB1676
Contextual Info: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.
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2SD2618
2SB1676.
100ms)
O-220FN
1k-10k
characterist10k
10MHz
2SD2618
2SB1676
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2SB1674
Abstract: 2SD2615 transistor 120v
Contextual Info: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.
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2SB1674
-120V,
2SD2615.
O-220FN
-120V
10MHz
2SB1674
2SD2615
transistor 120v
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TO-220FN
Abstract: 2SB1674 2SD2615 2sd26
Contextual Info: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.
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OCR Scan
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2SB1674
-120V,
2SD2615.
O-220FN
-10MHZ
TO-220FN
2SB1674
2SD2615
2sd26
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PDF
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2SB1674
Abstract: 2SD2615
Contextual Info: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.
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2SD2615
O-220FN
2SB1674
2SB1674
2SD2615
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Contextual Info: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector
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2SD2614
O-220FN
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2SD2614
Abstract: transistor collector diode protection TO-220FN diode zener 40v OA 70 diode 2sd26
Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.
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2SD2614
O-220FN
2k-30k
oo24imfa
2SD2614
transistor collector diode protection
TO-220FN
diode zener 40v
OA 70 diode
2sd26
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2SB1676
Abstract: 2SD2618 2sd26
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.
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OCR Scan
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2SB1676
2SD2618.
-50nA
-50pA
10MHz
2SB1676
2SD2618
2sd26
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2SB1676
Abstract: 2SD2618
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.
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2SB1676
2SD2618.
O-220FN
10MHz
2SB1676
2SD2618
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2SD2614
Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.
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2SD2614
O-220FN
2SD2614
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2SD2616
Contextual Info: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage
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2SD2616
100ms
O-220FN
2SD2616
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2SB1672
Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.
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2SD2611
2SB1672.
100ms
2SB1672
2SD2611
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2SB1674
Abstract: 2SD2615 transistor 120v
Contextual Info: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ
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2SD2615
2SB1674.
10MHz
2SB1674
2SD2615
transistor 120v
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2SB1672
Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at Ic / 2) Excellent DC current gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.
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OCR Scan
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2SD2611
2SB1672.
100ms
O-220FN
2SB1672
2SD2611
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PDF
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LT 672
Abstract: 2SB1672 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.
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OCR Scan
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2SD2611
2SB1672.
100ms
O-220FN
50fiA
LT 672
2SB1672
2SD2611
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PDF
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2SB1672
Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.
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OCR Scan
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2SD2611
2SB1672.
100ms
O-220FN
B444S
2SB1672
2SD2611
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PDF
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2SB1676
Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector
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2SD2618
2SB1676.
100ms)
10MHz
2SB1676
2SD2618
doide
base, collector, emitter
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PDF
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2SB1672
Abstract: 2SD2611
Contextual Info: 2SB1672 Transistors Power Transistor −80V, −7A 2SB1672 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C).
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2SB1672
2SD2611.
2SB1672
2SD2611
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2SB1674
Abstract: 2SD2615
Contextual Info: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.
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Original
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2SB1674
-120V,
O-220FN
2SD2615
-120ipment
2SB1674
2SD2615
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PDF
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2SB1672
Abstract: S-100-12 2SD2611
Contextual Info: 2SB1672 Transistors Power Transistor -80V, -7A 2SB1672 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. Versât) = -0.3V at le / Ib =-4A / -0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25°C). 4) Wide SOA (safe operating area).
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OCR Scan
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2SB1672
2SD2611.
O-220FN
-50tiA
2SB1672
S-100-12
2SD2611
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PDF
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CTX12S
Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
CTX12S
SLA4038
fn651
SLA4037
sla1004
CTB-34D
SAP17N
2SC5586
2SK1343
CTPG2F
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PDF
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
fn651
CTB-34D
2SC5586
hvr-1x7
STR20012
sap17n
2sd2619
RBV-4156B
SLA4037
2sk1343
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PDF
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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