TRANSISTOR 2SK152 Search Results

TRANSISTOR 2SK152 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SK152 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ	PDF
K1529 Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ	PDF
Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	2SK1529 2SJ200 2-16C1B K1529	PDF
2SJ200 Abstract: 2SJ20 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20	PDF
2SJ200 Abstract: 2sk1529/2sj200 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200	PDF
2SK1529 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.	OCR Scan	2SK1529 2SJ200 2SK1529	PDF
c 111 transistor Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) . Complementary to 2SJ200	OCR Scan	2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor	PDF
2SJ200 Abstract: 6C1B Contextual Info: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : \| Yfs \| “4.OS (TYP.) r . . Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 2SJ200 6C1B	PDF
K1529 Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1529 Field Effect Transistor Silicon N Channel MOSType ji-MOS II High Power Amplifier Application F e a tu re s • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Admittance - \|Yfe I = 4.0S (Typ.)	OCR Scan	2SK1529 2SJ200	PDF
2SJ200 Abstract: 2SK1529 Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529	PDF
2sj200 Abstract: 2SK1529 Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : \|Yfs\| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ	PDF

2SK1529 Abstract: K1529 2SJ200 Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
2SK1529 Abstract: Toshiba 2SJ Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
k1529 Abstract: 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 k1529 2SJ200 2SK1529 toshiba pb includes toshiba 2-16c1b	PDF
2SJ200 Abstract: 2sk1529 2sj200 Toshiba 2SJ Contextual Info: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ	PDF
2SK1529 Abstract: toshiba 2Sj200 Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gg= 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.)	OCR Scan	2SK1529 2SJ200 2SK1529 toshiba 2Sj200	PDF
Contextual Info: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type rc-MOS II Audio Frequency Power Amplifier Application Features • High Breakdown Voltage - VDSS = -180V (Min.) • High Forward Transfer Admittance - Y fs ' = 4 . O S (T y p .) • Complementary to 2SK1529	OCR Scan	2SJ200 -180V 2SK1529	PDF
2SK1529 Contextual Info: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)	OCR Scan	2SK1529 2SJ200 SC-65 2SK1529	PDF
toshiba j200 Contextual Info: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : \|Yfg\| = 4.0S Typ. Complementary to 2SK1529	OCR Scan	2SJ200 toshiba j200	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF

TRANSISTOR 2SK152 Search Results

TRANSISTOR 2SK152 Result Highlights (5)

TRANSISTOR 2SK152 Datasheets Context Search

rjh3047

2SC 8550

K1529

K1529

2SJ200

2SJ200

2SK1529

c 111 transistor

2SJ200

K1529

2SJ200

2sj200

2SK1529

2SK1529

2SK1529

k1529

2SJ200

2SK1529

2SK1529

toshiba j200

TRANSISTOR bH-10