TRANSISTOR 3005 2 Search Results
TRANSISTOR 3005 2 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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CA3081F |
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CA3081 - Small Signal Bipolar Transistor |
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CA3082 |
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CA3082 - Small Signal Bipolar Transistor |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TRANSISTOR 3005 2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor 30054
Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
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transistor 3005Contextual Info: 3005 5 Watts - 28 Volts, Class C Microwave 3000 MHz GENERAL DESCRIPTION CASE OUTLINE The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor |
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transistor ESM 3004
Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
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O-220 00V-600V 1000T 2060T CB-70 transistor ESM 3004 ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a | |
BC818
Abstract: BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC807 BC808
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OT-23 BC807 BC808 BC817 BC818 BC846 BC847 BC848 BC849 BC850 BC818 BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC807 BC808 | |
MP1470
Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
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6251-412-2DS MP1470 transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482 | |
ITT ccu 3000 iContextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3. |
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6251-412-2DS 4bfl2711 4bfi2711 ITT ccu 3000 i | |
RS 3005 CL
Abstract: E1 3009 LM119
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MIL-M-38510/103H MIL-M-38510/103G MIL-PRF-38535. LM106 LM111 LH2111 LM119 LT119A RS 3005 CL E1 3009 LM119 | |
Contextual Info: MC10EP57, MC100EP57 3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open pulled LOW via the input pulldown resistors the device can also be used as a differential 2:1 multiplexer |
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MC10EP57, MC100EP57 MC10/100EP57 MC10EP57/D | |
103H transistor
Abstract: E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL LM119
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MIL-M-38510/103H MIL-M-38510/103G MIL-PRF-38535. part02 LM106 LM111 LH2111 LM119 LT119A 103H transistor E1 3007 GDFP1-G10 MIL-M-38510 103H GDFP2-F16 e74 330 diode marking e41 RS 3005 CL | |
transistor buv 90
Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
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O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C | |
transistor bc 488
Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
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BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B | |
maa 502
Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
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PS2501 optocoupler
Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
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Contextual Info: MC100EP40 3.3V / 5V ECL Differential Phase-Frequency Detector Description The MC100EP40 is a three−state phase−frequency detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Advanced design |
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MC100EP40 MC100EP40 MC100EP40/D | |
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PT 2102 ic
Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
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MIL-PRF-19500/412B MIL-S-19500/412A 2N3846, 2N3847, PT 2102 ic MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846 | |
transistor smd hqContextual Info: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which |
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HM-65642 HM-65642 80C86 80C88 transistor smd hq | |
DIM800ECM33-F000Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)* |
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DIM800ECM33-F000 DS5815-1 LN23667) DIM800ECM33-F000 | |
DIM1200ESM33-F000Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS |
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DIM1200ESM33-F000 DS5831-1 LN23824) DIM1200ESM33-F000 | |
Contextual Info: MC10EP451, MC100EP451 3.3V / 5V ECL 6-Bit Differential Register with Master Reset Description The MC10/100EP451 is a 6−bit fully differential register with common clock and single−ended Master Reset MR . It is ideal for very high frequency applications where a registered data path is |
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MC10EP451, MC100EP451 MC10/100EP451 MC10EP451/D | |
2N 326 Transistor
Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
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130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor | |
m 1305
Abstract: Marking D1c MC10EP101 MC10EP101FA MC10EP101FAR2 D1C marking ep101 transistor 3005 2
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MC10EP101 MC10EP101 EP101 250ps AND8003/D r14525 MC10EP101/D m 1305 Marking D1c MC10EP101FA MC10EP101FAR2 D1C marking transistor 3005 2 | |
Contextual Info: MC10EP29, MC100EP29 3.3V / 5V ECL Dual Differential Data and Clock D Flip-Flop With Set and Reset http://onsemi.com Description The MC10/100EP29 is a dual master−slave flip−flop. The device features fully differential Data and Clock inputs as well as outputs. |
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MC10EP29, MC100EP29 MC10/100EP29 MC10/100EL29. MC10EP29/D | |
c 945 TRANSISTOR equivalentContextual Info: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the |
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MC100EP16VC EP16VC LVEP16 remains00 MC100EP16VC AND8020 c 945 TRANSISTOR equivalent | |
HA11-7Contextual Info: european space agency agence spatiale européenne Pages 1 to 51 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 256K 32768x8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M65656 ESA/SCC Detail Specification No. 9301/030 |
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32768x8 M65656 HA11-7 |