TRANSISTOR 300V Search Results
TRANSISTOR 300V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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| TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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| TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR 300V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j | |
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Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated |
OCR Scan |
SQQ300BA60 200ns) hrEfe750 | |
Vbe 40 transistor
Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
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SQD300BA60 E76102 SQD300BA60 200ns) 400mA Vbe 40 transistor 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns | |
darlington 8A 300V
Abstract: 300V switching transistor SQD400BA60 M6 transistor
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SQD400BA60 E76102 SQD400BA60 200ns) 530mA darlington 8A 300V 300V switching transistor M6 transistor | |
Darlington 40A
Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
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SQD200A40/60 E76102 SQD200A 400/600V SQD200A40 SQD200A60 SQD200A40 Darlington 40A SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor 380 darlington | |
SQD300A60
Abstract: A1380 300V switching transistor SQD300A40 M6 transistor
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SQD300A40/60 E76102 SQD300A 400/600V SQD300A40 SQD300A60 SQD300A40 SQD300A60 A1380 300V switching transistor M6 transistor | |
MPSA92M
Abstract: pnp transistor 300v
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MPSA92M -300V 625mW QW-R201-020 MPSA92M pnp transistor 300v | |
MPSA92MContextual Info: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92 |
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MPSA92M -300V 625mW QW-R201-020 MPSA92M | |
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Contextual Info: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92 |
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MPSA92M -300V 625mW CHSA92M | |
300V switching transistor
Abstract: Vbe 40 transistor QCA300BA60
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QCA300BA60 E76102 QCA300BA60 200ns) 400mA 300V switching transistor Vbe 40 transistor | |
QCA300BA60
Abstract: 675g M6 transistor
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QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor | |
QCA300BA60Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is |
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QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A | |
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Contextual Info: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V |
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2SC2482 O-92NL 100ms* 500ms* QW-R211-015 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC MAX =625mW * Low collector-Emitter saturation voltage 1 TO-92 ORDERING INFORMATION |
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MPSA92M -300V 625mW MPSA92ML-T92-B MPSA92MG-T92-B MPSA92ML-T92-K MPSA92MG-T92-K MPSA92ML-T92-R MPSA92MG-T92-R MPSA92ML-T92-B | |
2SC2482
Abstract: common collector amplifier applications ce20v vc20e
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2SC2482 O-92NL QW-R211-015 2SC2482 common collector amplifier applications ce20v vc20e | |
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Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for |
OCR Scan |
SQP200A40/60 E76102 400/600V CI022aS SQD200A | |
603 transistor npn
Abstract: TRANSISTOR 434 KSP43 KSP42 603 npn
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OCR Scan |
KSP42/43 KSP42: KSP43: 625mW KSP42 KSP43 100MA, 603 transistor npn TRANSISTOR 434 KSP43 KSP42 603 npn | |
MMBTA42
Abstract: MMBTA42-AE3-R MMBTA42L MMBTA42L-AE3-R switch NPN SOT
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MMBTA42 MMBTA42 350mW OT-23 MMBTA42L MMBTA42-AE3-R MMBTA42L-AE3-R QW-R206-004 MMBTA42L MMBTA42L-AE3-R switch NPN SOT | |
MPSA42Contextual Info: MPSA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo-300V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage |
OCR Scan |
MPSA42 ceo-300V 625mW 100MHz 300ys, MPSA42 | |
SOT-23 1DContextual Info: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 FEATURES 1 *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation: |
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MMBTA42 MMBTA42 350mW OT-23 QW-R206-004 SOT-23 1D | |
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Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V |
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MMBTA92 MMBTA92 -300V 350mW OT-23 -30sing QW-R206-005 | |
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Contextual Info: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector Base Voltage : KST42 |
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KSP42/43 KSP42: KSP43: 625mW KST42 KST43 KST43 | |
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Contextual Info: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation: |
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MMBTA42 MMBTA42 350mW OT-23 QW-R206-004 | |