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    TRANSISTOR 3095 Search Results

    TRANSISTOR 3095 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3095 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A40M3

    Abstract: 2SD1145 ITR09962 ITR09963 ITR09964 ITR09965
    Text: Ordering number:ENN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. unit:mm 2006B [2SD1145] Features


    Original     		PDF ENN784E 2SD1145 2006B 2SD1145] A40M3 2SD1145 ITR09962 ITR09963 ITR09964 ITR09965

    2SD1145

    Abstract: No abstract text available
    Text: Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. unit:mm 2006B [2SD1145] 6.0 5.0


    Original     		PDF EN784E 2SD1145 2006B 2SD1145] SC-51 2SD1145

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


    Original     		PDF EN1609D 2SC3591 2010C 2SC3591] O-220AB

    EN1609D

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


    Original     		PDF EN1609D 2SC3591 2010C 2SC3591] O-220AB EN1609D

    2sc3088

    Abstract: No abstract text available
    Text: Ordering number:ENN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6


    Original     		PDF ENN1017B 2SC3088 00V/4A VCBO800V) 2SC3088] PW300 Cycle10% 2sc3088

    2SC3642

    Abstract: EN1626C
    Text: Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1626C 2SC3642 2SC3642] 2SC3642 EN1626C

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1626C 2SC3642 2SC3642]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6


    Original     		PDF ENN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10%

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1637C 2SC3638 2SC3638]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1614C 2SC3636 2SC3636]

    sanyo horizontal transistor

    Abstract: No abstract text available
    Text: Ordering number:EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1627C 2SC3643 2SC3643] sanyo horizontal transistor

    16373

    Abstract: sanyo 16373 sanyo horizontal transistor
    Text: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1637C 2SC3638 2SC3638] 16373 sanyo 16373 sanyo horizontal transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1627C 2SC3643 2SC3643]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · High speed. · High breakdown voltage.


    Original     		PDF EN1628C 2SC3644 2SC3644]

    sanyo horizontal transistor

    Abstract: No abstract text available
    Text: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1614C 2SC3636 2SC3636] sanyo horizontal transistor

    ic 7455

    Abstract: TRANSISTOR NPN 8A 800V
    Text: Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · High speed. · High breakdown voltage.


    Original     		PDF EN1628C 2SC3644 2SC3644] ic 7455 TRANSISTOR NPN 8A 800V

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3086] 10.2


    Original     		PDF ENN1010B 2SC3086 00V/3A VCBO800V) 2010C 2SC3086] PW300 Cycle10%

    2SC3637

    Abstract: No abstract text available
    Text: Ordering number:EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1615C 2SC3637 2SC3637] 2SC3637

    2SC3038

    Abstract: ITR05226 ITR05227 ITR05228 ITR05229 5ib2 L200H
    Text: Ordering number:ENN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3038] 10.2 3.6


    Original     		PDF ENN949B 2SC3038 00V/4A VCBO500V) 2010C 2SC3038] O-220AB 2SC3038 ITR05226 ITR05227 ITR05228 ITR05229 5ib2 L200H

    2SC3039

    Abstract: 9964
    Text: Ordering number:EN996B NPN Triple Diffused Planar Silicon Transistor 2SC3039 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3039] 1 : Base


    Original     		PDF EN996B 2SC3039 00V/7A VCBO500V) 2010C 2SC3039] O-220AB SC-46 PW300 Cycle10% 2SC3039 9964

    9494 transistor

    Abstract: 2SC3038
    Text: Ordering number:EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3038] 1 : Base


    Original     		PDF EN949B 2SC3038 00V/4A VCBO500V) 2010C 2SC3038] O-220AB SC-46 PW300 Cycle10% 9494 transistor 2SC3038

    Untitled

    Abstract: No abstract text available
    Text: I Orderingnumber: E.N 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 1637B 2SC3638 T03PB 4227KI/3095KI/N194KI Q0H0331 DDEDB33

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1627B _2SC3643 N PN Triple D iffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 1627B 2SC3643 T03PB M217KI/3095KI/N22UKI 0D20337 002033a

    sfh siemens

    Abstract: npn phototransistor sfh 309 380nm SFH 309
    Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position


    OCR Scan     		PDF PCE25° sfh siemens npn phototransistor sfh 309 380nm SFH 309