TRANSISTOR 3095 Search Results
TRANSISTOR 3095 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR 3095 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: I Orderingnumber: E.N 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage. |
OCR Scan |
1637B 2SC3638 T03PB 4227KI/3095KI/N194KI Q0H0331 DDEDB33 | |
A40M3
Abstract: 2SD1145 ITR09962 ITR09963 ITR09964 ITR09965
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ENN784E 2SD1145 2006B 2SD1145] A40M3 2SD1145 ITR09962 ITR09963 ITR09964 ITR09965 | |
Contextual Info: Ordering number: EN 1627B _2SC3643 N PN Triple D iffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage. |
OCR Scan |
1627B 2SC3643 T03PB M217KI/3095KI/N22UKI 0D20337 002033a | |
2SD1145Contextual Info: Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. unit:mm 2006B [2SD1145] 6.0 5.0 |
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EN784E 2SD1145 2006B 2SD1145] SC-51 2SD1145 | |
Contextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm |
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EN1609D 2SC3591 2010C 2SC3591] O-220AB | |
EN1609DContextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm |
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EN1609D 2SC3591 2010C 2SC3591] O-220AB EN1609D | |
2sc3088Contextual Info: Ordering number:ENN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6 |
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ENN1017B 2SC3088 00V/4A VCBO800V) 2SC3088] PW300 Cycle10% 2sc3088 | |
sfh siemens
Abstract: npn phototransistor sfh 309 380nm SFH 309
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OCR Scan |
PCE25° sfh siemens npn phototransistor sfh 309 380nm SFH 309 | |
2SC3642
Abstract: EN1626C
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EN1626C 2SC3642 2SC3642] 2SC3642 EN1626C | |
Contextual Info: Ordering number:EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1626C 2SC3642 2SC3642] | |
Contextual Info: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6 |
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ENN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10% | |
Contextual Info: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1637C 2SC3638 2SC3638] | |
Contextual Info: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1614C 2SC3636 2SC3636] | |
sanyo horizontal transistorContextual Info: Ordering number:EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1627C 2SC3643 2SC3643] sanyo horizontal transistor | |
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Contextual Info: Ordering number:EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1627C 2SC3643 2SC3643] | |
Contextual Info: Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · High speed. · High breakdown voltage. |
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EN1628C 2SC3644 2SC3644] | |
EN1615
Abstract: sanyo horizontal transistor
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EN1615C 2SC3637 2SC3637] EN1615 sanyo horizontal transistor | |
sanyo horizontal transistorContextual Info: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1614C 2SC3636 2SC3636] sanyo horizontal transistor | |
ic 7455
Abstract: TRANSISTOR NPN 8A 800V
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EN1628C 2SC3644 2SC3644] ic 7455 TRANSISTOR NPN 8A 800V | |
Contextual Info: Ordering number:ENN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3086] 10.2 |
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ENN1010B 2SC3086 00V/3A VCBO800V) 2010C 2SC3086] PW300 Cycle10% | |
2SC3637Contextual Info: Ordering number:EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage. |
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EN1615C 2SC3637 2SC3637] 2SC3637 | |
2SC3038
Abstract: ITR05226 ITR05227 ITR05228 ITR05229 5ib2 L200H
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ENN949B 2SC3038 00V/4A VCBO500V) 2010C 2SC3038] O-220AB 2SC3038 ITR05226 ITR05227 ITR05228 ITR05229 5ib2 L200H | |
2SC3039
Abstract: 9964
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EN996B 2SC3039 00V/7A VCBO500V) 2010C 2SC3039] O-220AB SC-46 PW300 Cycle10% 2SC3039 9964 | |
9494 transistor
Abstract: 2SC3038
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EN949B 2SC3038 00V/4A VCBO500V) 2010C 2SC3038] O-220AB SC-46 PW300 Cycle10% 9494 transistor 2SC3038 |