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    TRANSISTOR 313 SMD Search Results

    TRANSISTOR 313 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLE32SN120SZ1L
    		Murata Manufacturing Co Ltd FB SMD 1210inch 12ohm INFOTMT Visit Murata Manufacturing Co Ltd
    BLM21HE122BH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 1200ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    TRANSISTOR 313 SMD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4P04L11

    Abstract: IPD50P04P4L-11
    Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD50P04P4L-11 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 IPD50P04P4L-11 PDF

    4P04L11

    Abstract: INFINEON marking
    Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 INFINEON marking PDF

    4P04L11

    Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
    Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 726-IPD50P04P4L-11 4P04L11 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50 PDF

    Contextual Info: IPD5N25S3-430 OptiMOS -T Power-Transistor Product Summary V DS 250 V R DS on ,max 430 mW ID 5 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD5N25S3-430 PG-TO252-3-313 PG-TO252-3- 3N25430 PDF

    4P0413

    Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
    Contextual Info: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD50P04P4-13 PG-TO252-3-313 4P0413 -10V2) 4P0413 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413 PDF

    4-P-04

    Contextual Info: IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 6.4 mW ID -85 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD85P04P4L-06 PG-TO252-3-313 4P04L06 -10V2) 4-P-04 PDF

    4N0402

    Abstract: a3180 c9025 IPD90N04S4-02 TH-43
    Contextual Info: IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N04S4-02 PG-TO252-3-313 4N0402 4N0402 a3180 c9025 IPD90N04S4-02 TH-43 PDF

    4N0405

    Contextual Info: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N04S4-05 PG-TO252-3-313 4N0405 4N0405 PDF

    4N0403

    Abstract: IPD90N04S4-03 65V-5 IPD90N04S4
    Contextual Info: IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N04S4-03 PG-TO252-3-313 4N0403 4N0403 IPD90N04S4-03 65V-5 IPD90N04S4 PDF

    4N0405

    Abstract: IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313
    Contextual Info: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N04S4-05 PG-TO252-3-313 4N0405 4N0405 IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313 PDF

    4N04L04

    Abstract: IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313
    Contextual Info: IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.8 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD90N04S4L-04 PG-TO252-3-313 4N04L04 4N04L04 IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313 PDF

    IPD70P04P4L-08

    Abstract: a1409
    Contextual Info: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD70P04P4L-08 PG-TO252-3-313 4P04L08 -10V1) IPD70P04P4L-08 a1409 PDF

    IPD90P04P4-05

    Abstract: 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405
    Contextual Info: IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD90P04P4-05 PG-TO252-3-313 4P0405 -10V2) IPD90P04P4-05 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405 PDF

    IPD100N04S4-02

    Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
    Contextual Info: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD100N04S4-02 PG-TO252-3-313 4N0402 IPD100N04S4-02 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n PDF

    4P0409

    Abstract: IPD70P04P4-09 IPD70P04P4
    Contextual Info: IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD70P04P4-09 PG-TO252-3-313 4P0409 -10V1) 4P0409 IPD70P04P4-09 IPD70P04P4 PDF

    Contextual Info: IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V DS 100 V R DS on ,max 6.6 mW ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 3 • Green Product (RoHS compliant)


    Original     		IPD90N10S4L-06 PG-TO252-3-313 4N10L06 PDF

    4P0407

    Abstract: IPD85P04P407
    Contextual Info: IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.3 mW ID -85 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD85P04P4-07 PG-TO252-3-313 4P0407 -10V2) 4P0407 IPD85P04P407 PDF

    IPD75N04S4-06

    Abstract: 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n
    Contextual Info: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD75N04S4-06 PG-TO252-3-313 4N0406 726-IPD75N04S4-06 IPD75N04S4-06 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n PDF

    IPD50N04S4L-08

    Abstract: 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A
    Contextual Info: IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD50N04S4L-08 PG-TO252-3-313 IPD50N04S4-08 4N04L08 IPD50N04S4L-08 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A PDF

    4N0410

    Abstract: IPD50N04S4-10
    Contextual Info: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD50N04S4-10 PG-TO252-3-313 4N0410 4N0410 IPD50N04S4-10 PDF

    Contextual Info: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD70P04P4L-08 PG-TO252-3-313 4P04L08 -10V1) PDF

    IPD50N04S4-08

    Abstract: 4N0408
    Contextual Info: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD50N04S4-08 PG-TO252-3-313 4N0408 IPD50N04S4-08 4N0408 PDF

    4N0406

    Abstract: 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32
    Contextual Info: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		IPD75N04S4-06 PG-TO252-3-313 4N0406 4N0406 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32 PDF

    4P04L04

    Abstract: IPD90P04P4L04
    Contextual Info: IPD90P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.3 mW ID -90 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPD90P04P4L-04 PG-TO252-3-313 4P04L04 -10V2) 4P04L04 IPD90P04P4L04 PDF