TRANSISTOR 3199 Search Results

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

Contextual Info: KSD1943 HIGH NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol 80 V Collector Emitter Voltage V ceo 60 V Emitter Base Voltage V ebo 8 V Collector Current lc 3 A Collector Dissipation TA=25°C

TRANSISTOR 2SC 1172

Abstract: 3199GR 2sc 1172 2SC3199GR
Contextual Info: F eatures: P.C. BOARD MOUNTING SMALL SIZE AND LIGHTW EIGHT RICH SOUND OUTPUT AND LOW CURRENT DRAIN THE RECOMMENDED SELF-DRIVEN CIRCUIT UTILIZES TRANSISTOR SWITCHING +v<> The current consumption and the sound pressure 2SC 3199GR level are measured by using the recommend

Contextual Info: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1022 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage C haracteristic VcBO Symbol

EB 13005

Abstract: transistor 13005 CIRCUIT
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Sym bol : KSE13004 Rating VcBO : KSE13005

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BDX53

Abstract: BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C
Contextual Info: BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BDX54, BDX54A, BDX54B and BDX54C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo 7 V

Contextual Info: KSD1413 NPN SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1023 ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol Rating Unit 60 V Collector Emitter Voltage

Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage : BD240

Contextual Info: KSA1243 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Complement to KSC3073 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcB O -3 0 V Collector Emitter Voltage VcE O - 30 V Emitter Base Voltage V ebo

Contextual Info: KSD1588 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-220F • Complement to KSB1097 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage V cB O 100 V Collector Emitter Voltage V cE O 60

bd242

Contextual Info: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Emitter Voltage : BD242 Rating VcEO : BD242A U nii -4 5 V - 60

transistor E 13007

Abstract: 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Sw itching • Suitable fo r Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : KSE13006 Rating VcBO

KSD5072

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5702 COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage (VCBo=1500V) • High Switching Speed (tF. max=0.4jis) ABSOLUTE MIXIMUM RATING Rating Unit Collector Base Voltage

EZ 707

Abstract: 2SC3544 EZ 0710 EZ 728
Contextual Info: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

BDX34C

Abstract: BDX34 BDX34B BDX34A transistor bdx34c transistor BDX34 65
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD X33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Base : BDX34

Contextual Info: KSD5090 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High C ollector-Base Voltage (V CBO=1500V) • High Speed Sw itching (tF = 0.1(is) ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage

Contextual Info: KSH41C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface Mount Application No Suffix • Straight Lead (I.P A C K ,1 ” Suffix) • Electrically Similar to Popular TIP41 and TIP41C

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5080 COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN T O -3P F • High C ollector-Base Voltage (V CBo=1500V) • High Sw itching Speed (tF. m ax=0.1(is) ABSOLUTE MIXIMUM RATING R a tin g U n it

Contextual Info: KSH45H11 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING SUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Load Formed for Surface Mount Application No Suffix Straight Lead (I.P A C K ,1 ” Suffix)

Contextual Info: KSH44H11 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHING SUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Load Formed for Surface Mount Application No Suffix Straight Lead (I.P A C K ,1 ” Suffix)

Contextual Info: KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface Mount Application No Suffix • Straight Lead (I.P A C K ,1 ” Suffix) • Electrically Similar to Popular TIP32 and TIP32C