TRANSISTOR 3202 1 A 60 Search Results

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

J377

Abstract: 2N4211 to63 J3772 2N3237 2N3598 2N3599 2N3773 2N5631 2N6259
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE | 2fl4ñ35S 0000130 3 TJ~ö D1QEE TR<aHI5J5TQR CD., INC. (201 686-0400 »Telex: 139-385 • Outside NY & NJ area call T O LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE V CEO Max(V) Mln/Max 2N3773 2N5629 2N5630

2N4211

Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

TO63

Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629

transistor 3205 equivalent

Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
Contextual Info: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

HD6473214P16

Abstract: HD6473217TF16 BC2 373 Hitachi DSA0044
Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

Hitachi DSA00771

Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

block diagram of mri machine

Abstract: HD6473214P16 STATES10
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA0087

Abstract: HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16
Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 8/12/97 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

Hitachi DSA0057

Contextual Info: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 02/07/96 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.

mitsubishi H96

Abstract: HD6473214F16 HD6473217P16
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d 2539 transistor

Abstract: AN541 HA1-2539
Contextual Info: U U HA-2539 HARRIS S E M I C O N D U C T O R 600MHz, Very High Slew Rate Operational Amplifier N o ve m b e r 1996 Features D escription • Very High Slew R a te . 600V/ns • Open Loop

C6145A

Abstract: 2SC6145A 2SA2223A High power audio transistor equivalent table 2SC6145 sanken lapt sanken power transistor SANKEN AUDIO Sanken Transistor Mt 200 multi emitter transistor
Contextual Info: 2SC6145A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve

2n4405

Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
Contextual Info: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous

Contextual Info: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed

VON100

Abstract: VOP100
Contextual Info: HFA1120/883 S E M I C O N D U C T O R 850MHz Current Feedback Amplifier with Offset Adjust July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling

Contextual Info: HFA1120/883 Œ MASS'S 850MHz Current Feedback Amplifier with Offset Adjust jUiy1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling

Contextual Info: HFA 1120/883 & MAR , 850MHz Current Feedback Amplifier with Offset Adjust juiy 1994 Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling

Contextual Info: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

SPDT FETs

Abstract: SKY13317-373LF uhf microwave fet AS179-92LF ba20 transistor SKY13317-373 SKY13318-321LF SKY13286-359LF SKY13290-313LF SKY13298-360LF
Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz Features • Low-insertion loss

Contextual Info: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna

Contextual Info: ~ Semiconductor, Inc. TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ TheTC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and Inverters, and similar circuits where

AD584

Abstract: AD596 AD596AH AD597 AD597AH AD597AR ICL7136 1262 thermometer 6243 so-8
Contextual Info: @ +60؇C and VS = 10 V, Type J (AD596 , Type K (AD597) Thermocouple, AD596/AD597–SPECIFICATIONS unless otherwise noted) Model AD596AH Typ Max Min ABSOLUTE MAXIMUM RATINGS +VS to –VS Common-Mode Input Voltage Differential Input Voltage Alarm Voltages +ALM