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    TRANSISTOR 337 40 Search Results

    TRANSISTOR 337 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 337 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uPB1509B

    Abstract: poly silicon resistor mmic j
    Text: 1, Introduction In the fields of comm unication systems and consumer electronics e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners , analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy


    Original     		PDF uPB1509B PB15O9B poly silicon resistor mmic j

    BSS125

    Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
    Text: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1


    Original     		PDF PA804T 2SC4571 PA804T-T1 2SC4571)

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    pin configuration PNP transistor BC327

    Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers


    Original     		PDF QSC/L-000019 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet

    pin configuration PNP transistor BC327

    Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers


    Original     		PDF ISO/TS16949 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN

    N07A

    Abstract: DG506 N05A DG507 MAX336 MAX336CAI MAX336CPI MAX336CWI MAX337 N06A
    Text: 19-1193; Rev 0; 4/97 16-Channel/Dual 8-Channel, Low-Leakage, CMOS Analog Multiplexers _Features ♦ <400Ω max On-Resistance These muxes feature extremely low off leakages (less than 20pA at +25°C) and on-channel leakages (less than


    Original     		PDF 16-Channel/Dual DG506 DG507. MAX336/MAX337 MAX336/MAX337 N07A N05A DG507 MAX336 MAX336CAI MAX336CPI MAX336CWI MAX337 N06A

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power


    OCR Scan     		PDF BUK100-50GL Q03034S

    transistor bc 102

    Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
    Text: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As


    OCR Scan     		PDF BC327 BC328 103mA transistor bc 102 bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337

    bc337

    Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
    Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C


    OCR Scan     		PDF BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840

    BC337

    Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage


    OCR Scan     		PDF BC337/338 BC337/BC328 BC337 BC338 BC337 TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe

    transistor 91 330

    Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
    Text: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120


    OCR Scan     		PDF 4N25A 4N29A 4N32A 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M transistor 91 330 tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120

    Transistor 337

    Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
    Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier


    OCR Scan     		PDF

    UBT430

    Abstract: 1N6391 1N914 SA 848 00-125-10
    Text: IU CROSEM I CORP/ UATERTOIlIN JiOE II • 13t71b3 OOIESOR LOW VOLTAGE NPN TRANSISTOR UBT430 40Amp, 50V, Planar NPN Low Saturation Voltage .3V @ 30A ; High Efficiency FE A T U R ES 845 ■ ¡U N IT 7^ DESC R IPT IO N • Very Low On Resistance — Typically 7 milliohms


    OCR Scan     		PDF UBT430 40Amp, UBT430 100ns 1N6391 1N914 SA 848 00-125-10

    LM 337

    Abstract: No abstract text available
    Text: SGS-THOMSON LM237 LM337 THREE-TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATORS • OUTPUT VOLTAGE ADJUSTABLE DOWN TO Vref ■ ■ ■ . ■ . ■ ■ 1.5A GUARANTEED OUTPUT CURRENT 0.3%/V TYPICAL LOAD REGULATION 0.01 %/V TYPICAL LINE REGULATION CURRENT LIMIT CONSTANT WITH TEMPE­


    OCR Scan     		PDF LM237 LM337 50ppm/Â LM237 237-LM LM137 10jiF LM 337

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S215 E6327

    TRANSISTOR BC 327

    Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
    Text: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as


    OCR Scan     		PDF BC327 BC328 TRANSISTOR BC 327 h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 transistor 327

    CD 4017

    Abstract: C4017 C-4017 of I 4017 n transistor 4017
    Text: K "7 > v 7* $ 2SC1545M/2SC4017 / T r a n s is t o r s i t N P N > h> V y 'sv w rail'll & 7 ^>^ffl/High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors 2SC1545M 2S C 4017 • W fi\H il2l/D im ension s Unit : mm 1) ? - ' ) > -y (hFE= 5 0 0 0 0 Typ . at 100mA)


    OCR Scan     		PDF 2SC1545M/2SC4017 2SC1545M 100mA) CD 4017 C4017 C-4017 of I 4017 n transistor 4017

    buz64

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type V Ds BUZ 64 400 V ^DS on 11.5 A 0.4 il M axim um Ratings Parameter Continuous drain current, 7C = 31 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7] max


    OCR Scan     		PDF 67078-S1017-A2 buz64

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		PDF NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534

    TRANSISTOR nf 842

    Abstract: D 843 Transistor transistor su 312
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:


    OCR Scan     		PDF NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


    OCR Scan     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 64 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos /D ^DS on Package 1) Ordering Code BUZ 64 400 V 11.5 A 0.4 £2 TO-204 AA C67078-S1017-A2 Maximum Ratings Symbol Parameter Continuous drain current, Tc = 31 °C


    OCR Scan     		PDF O-204 C67078-S1017-A2 23SbDS DDb7T15 fl23Sb05