TRANSISTOR 337 40 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

transistor bc 102

Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Contextual Info: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C

BC337

Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

transistor 91 330

Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
Contextual Info: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

uPB1509B

Abstract: poly silicon resistor mmic j
Contextual Info: 1, Introduction In the fields of comm unication systems and consumer electronics e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners , analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy

BSS125

Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)

Contextual Info: ykiyjxivki 19-1193; Rev0; 4/97 16-Channel/Dual 8-Channel, Lo w -Lea kage , CMOS A n a lo g M u lt ip le x e r s _ F e a t u r e s ♦ <400£2 max On-Resistance ♦ <500ns Transition Time ♦ <10£2 On-Resistance Match ♦ <20pA NO-Off Leakage Current at +25 °C

UBT430

Abstract: 1N6391 1N914 SA 848 00-125-10
Contextual Info: IU CROSEM I CORP/ UATERTOIlIN JiOE II • 13t71b3 OOIESOR LOW VOLTAGE NPN TRANSISTOR UBT430 40Amp, 50V, Planar NPN Low Saturation Voltage .3V @ 30A ; High Efficiency FE A T U R ES 845 ■ ¡U N IT 7^ DESC R IPT IO N • Very Low On Resistance — Typically 7 milliohms

LM 337

Contextual Info: SGS-THOMSON LM237 LM337 THREE-TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATORS • OUTPUT VOLTAGE ADJUSTABLE DOWN TO Vref ■ ■ ■ . ■ . ■ ■ 1.5A GUARANTEED OUTPUT CURRENT 0.3%/V TYPICAL LOAD REGULATION 0.01 %/V TYPICAL LINE REGULATION CURRENT LIMIT CONSTANT WITH TEMPE­

Contextual Info: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as

CD 4017

Abstract: C4017 C-4017 of I 4017 n transistor 4017
Contextual Info: K "7 > v 7* $ 2SC1545M/2SC4017 / T r a n s is t o r s i t N P N > h> V y 'sv w rail'll & 7 ^>^ffl/High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors 2SC1545M 2S C 4017 • W fi\H il2l/D im ension s Unit : mm 1) ? - ' ) > -y (hFE= 5 0 0 0 0 Typ . at 100mA)

TRANSISTOR nf 842

Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

pin configuration PNP transistor BC327

Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

Contextual Info: SIEMENS BUZ 64 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos /D ^DS on Package 1) Ordering Code BUZ 64 400 V 11.5 A 0.4 £2 TO-204 AA C67078-S1017-A2 Maximum Ratings Symbol Parameter Continuous drain current, Tc = 31 °C

pin configuration PNP transistor BC327

Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

N07A

Abstract: DG506 N05A DG507 MAX336 MAX336CAI MAX336CPI MAX336CWI MAX337 N06A
Contextual Info: 19-1193; Rev 0; 4/97 16-Channel/Dual 8-Channel, Low-Leakage, CMOS Analog Multiplexers _Features ♦ <400Ω max On-Resistance These muxes feature extremely low off leakages (less than 20pA at +25°C) and on-channel leakages (less than