TRANSISTOR 342 PF Search Results

transistor 342 G

Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

C67078-S3135-A2

Abstract: transistor 342 G BUZ342
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60SP

Abstract: GA200SA60S
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60SP

Abstract: smps tig welding transistor 342 G
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

Contextual Info: Philips Components D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e October 1990 FEATURES • Direct interface to C-M O S, TTL, etc., due to low threshold voltage • High speed switching • No secondary breakdown BSN 274/BSN 274A

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

Contextual Info: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and

J645

Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Contextual Info: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

Contextual Info: KSA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSC945 • Collector-Base Voltage V TO-92 cbo = -8 °v ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

2N5643

Contextual Info: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in

BFX60

Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

BLY93a

Contextual Info: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR

Contextual Info: S C S T H O M S O N IM^làì 5 HHHCTIsì(5)lfflH(ei_AM82731 -003 RF & MICROW AVE TR A NSISTO R S S-BAND RADAR APPLICATIO NS . R EFR A C TO R Y/G O LD METALLIZATION . EM ITTER SITE BALLASTED • 10:1 VSW R CAPABILITY . LOW THERM AL RESISTANCE ■ IN P U T/O U TP U T IM PEDANCE M A TC HING

L6562D

Abstract: Electronic ignitors for HID lamp circuits Diac st 083 schematic diagram Electronic Ballast HID circuit diagram electronic choke for tube light schematic hid ballast 35w ELECTRONIC BALLAST 150 W HID DIAGRAM melf ZENER diode COLOR CODE schematic hid lamp ballast schematic hid sodium lamp ballast
Contextual Info: AN2952 Application note 35 W electronic ballast for HID lamps Introduction Low-power metal halide lamps are becoming popular as lighting sources in indoor environments like shopping centers or malls, serving as alternatives to more traditional halogen lamps, thanks to their intrinsic higher efficiency, longer lifetime and optimal color

Contextual Info: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

ULQ2003AQDRQ1

Abstract: ULQ2004A-Q1 ULQ2003A ULQ2003ATDQ1 ULQ2003ATDRQ1 ULQ2004A ULQ2004ATDQ1 ULQ2004ATDRQ1
Contextual Info: ULQ2003AĆQ1, ULQ2004AĆQ1, HIGHĆVOLTAGE HIGHĆCURRENT DARLINGTON TRANSISTOR ARRAY SGLS148C − DECEMBER 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D PACKAGE TOP VIEW Machine Model (C = 200 pF, R = 0)

Contextual Info: Single N-channel MOSFET ELM32434LA-S •General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings

2SC482

Abstract: 2SA485 2SC15-0 2SA484 2SA486 2SA496 2SA497 2SA501 2SA503 2SA504
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC793

Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English