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    TRANSISTOR 3569 Search Results

    TRANSISTOR 3569 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3569 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a 4x transistor

    Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
    Text: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using


    Original     		PDF MBC13900PP/D MBC13900 MBC13900 a 4x transistor MOTOROLA TRANSISTOR 318M motorola rf Power Transistor motorola sps transistor

    sot-343 as

    Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
    Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70


    Original     		PDF MBC13900PP/D MBC13900 MBC13900 sot-343 as a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M motorola sps transistor 3AA2

    Motorola

    Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
    Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70


    Original     		PDF MBC13900PP/D MBC13900 MBC13900 Motorola MOTOROLA TRANSISTOR 318M

    MOTOROLA TRANSISTOR

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order this document by MBC13901PP/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005


    Original     		PDF MBC13901PP/D MBC13901 MBC13901 MOTOROLA TRANSISTOR

    motorola sps transistor

    Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor

    MOTOROLA TRANSISTOR

    Abstract: 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA
    Text: Order this document by MBC13901PP/D Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor The MBC13901 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70


    Original     		PDF MBC13901PP/D MBC13901 MBC13901 MOTOROLA TRANSISTOR 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA

    200E

    Abstract: MRF1047 MRF1047T1
    Text: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA


    Original     		PDF MRF1047T1/D 03AUG01 26MAR02 200E MRF1047 MRF1047T1

    200B

    Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P20180/D MRF5P20180R6 200B MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    ATC 1184

    Abstract: A113 MRFG35005MT1 tc 106-10
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 tc 106-10

    MRF9120

    Abstract: MRF9120S
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9120/D MRF9120 MRF9120S MRF9120 MRF9120S

    MRFG35010M

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M

    CTB128

    Abstract: MHW8242A XMD128
    Text: MOTOROLA Order this document by MHW8242A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW8242A Features • • • • Specified for 77– and 128–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology


    Original     		PDF MHW8242A/D MHW8242A CTB128 MHW8242A XMD128

    CTB110

    Abstract: MHW7292A XMD110 CATV amplifier transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW7292A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7292A Features • • • • Specified for 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology


    Original     		PDF MHW7292A/D MHW7292A CTB110 MHW7292A XMD110 CATV amplifier transistor

    NI-360HF

    Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from


    Original     		PDF MRFG35010/D MRFG35010 NI-360HF MRFG35010 MTP23P06V RO4350 DIODE Z5

    CTB110

    Abstract: MHW7272A XMD110 CATV amplifier transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW7272A/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW7272A Features • • • • Specified for 110–Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology


    Original     		PDF MHW7272A/D MHW7272A CTB110 MHW7272A XMD110 CATV amplifier transistor

    transistor 3569

    Abstract: 3569 pN3569
    Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE


    OCR Scan     		PDF 500mA. O-92A Vcb-40V Ta-75Â 150mA IB-15mA Ic-150Â BOXfc9477 VCE-10V transistor 3569 3569 pN3569

    Untitled

    Abstract: No abstract text available
    Text: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE


    OCR Scan     		PDF 500mA. O-92A 150mA 15fflA f-20Mc 300uS,

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor 3569

    Abstract: 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor
    Text: y tte NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN /llC F t O E I _ E C ; - r R GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. O I V I I C


    OCR Scan     		PDF 500mA, O-92A 100uA Ta-75Â 150mA Ib-15mA transistor 3569 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    BLX67

    Abstract: mrtil transistor 3568
    Text: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,


    OCR Scan     		PDF G014DDM BLX67 T-33-Ã BLX67 mrtil transistor 3568

    sk3552

    Abstract: sk3564 SK3568 SK3569 SK3596 SK3590 SK3556 SK3565 SK3567 sk3555
    Text: THOMSON/ H DIS TRI BU TOR SflE D INTEGRATED CIRCUIT PINOUTS TD5tiö73 OOCmflM hS7 TCSK com. SK3550 SK 3564 SK 3569 High-Current 7-NPN Transistor Array Time Delay and Ose. Circuit Quad Volt. Comparator Outline No. IC-017 Outline No. IC-014 Outline No. IC-015


    OCR Scan     		PDF SK3550 IC-017 SK3552 IC-014 SK3555 IC-001 SK3556 IC-015 SK3564 sk3552 sk3564 SK3568 SK3569 SK3596 SK3590 SK3556 SK3565 SK3567 sk3555