TRANSISTOR 359 A K Search Results

K1359

Abstract: toshiba l40 2SK1359
Contextual Info: T O S H IB A 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

A1359

Abstract: 2SA1359 2SC3422
Contextual Info: 2SA1359 TOSHIBA 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY PO W ER AMPLIFIER. LOW SPEED SWITCHING. • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. Good Linearity of h-FEComplementary to 2SC3422.

2SA1359

Abstract: 2SC3422 A1359
Contextual Info: TO SH IBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. • Good Linearity of hjpg. • Complementary to 2SC3422.

Contextual Info: TOSHIBA 2SK1359 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S I I 5 2 S K 1 359 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS U n i t in m m • Low Drain-Source ON Resistance

a1359

Abstract: 2tj transistor 2SA1359 2SC3422 cd 3301
Contextual Info: TOSHIBA 2SA1359 2 S A 1 359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER. LO W SPEED SWITCHING. • 8.3 MAX. • • 0 z.i± o .i 5.8 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo.

Contextual Info: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING. U nit in mm 8.3M AX. 0 S .1 + C U &8 • Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. ä ' • Good Linearity of h p g.

Contextual Info: TOSHIBA 2SA1359 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 359 AUDIO FREQUENCY PO W ER AMPLIFIER. U n it in mm LO W SPEED SWITCHING. • Su itab le for O utput Stage of 5 W a tts C ar Radio and C ar i m Stereo. • Good L in e a rity of

Contextual Info: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH /£?POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit Collector Base Voltage VcBO 80 V Collector Emitter Voltage VcEO 60 V Emitter Base Voltage V eb o 8 V Collector Current lc 3 A Collector Dissipation TA=25'C

BP317

Abstract: PMBT5401 PMBT5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA

transistor J9

Contextual Info: KSD1943 NPN EPITAXIAL SILICON TRANSISTOR HIGH j9 POWER TRANSISTOR TO -220 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit VcBO 80 60 8 3 40 1 50 —5 5 ~ 1 50 V V V A W °C °C Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

PDTA123JE

Abstract: PDTC123JE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ

PDTA124XE

Abstract: PDTC124XE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ

Contextual Info: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).

PDTA124XE

Abstract: PDTC124XE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ

PDTC143XE

Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ

BP317

Abstract: MMBTA42 MMBTA92 254-D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN

PDTC114YE

Abstract: SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ

MMBTA92

Abstract: BP317 MMBTA42
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN

PDTC114EE

Abstract: PDTA114EE SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each

PDTA143XE

Abstract: SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ

PDTC123ET

Abstract: marking code 10 sot23 PDTA123JT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ

U15 transformer

Abstract: horizontal deflection circuit Horizontal-Deflection Output transformer CD 7640 1200 w 45 khz transformer IC 3263 datasheet 6 pins IC cbe CU15/35 philips 1n4148 1N4148
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up

CD 7640

Abstract: U15 transformer horizontal deflection circuit nf 817 1N4148 BC337A BY359X-1500S BYV28-50 BZX79C6V8 philips BC
Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET 078 Horizontal deflection transistors for 17", 70 kHz monitors Using Philips’ CU15/35 drive transformer and BU4525AF/AX transistor Most 17" monitor designs for PCs are required to operate up

MMBT3906 PHILIPS

Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).