38w smd transistor
Abstract: 38w transistor
Text: User’s Manual 16 R8C/38W Group, R8C/38X Group, R8C/38Y Group, R8C/38Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
|
Original
|
PDF
|
R8C/38W
R8C/38X
R8C/38Y
R8C/38Z
o2-8175-9670
R01UH0065EJ0110
38w smd transistor
38w transistor
|
NTE480
Abstract: transistor 38W
Text: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.
|
Original
|
PDF
|
NTE480
512MHz
NTE480
512MHz
470MHz
transistor 38W
|
Untitled
Abstract: No abstract text available
Text: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression
|
Original
|
PDF
|
EIC4450-8
EIC4450-8
|
A 1469 mosfet
Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
transistor 38W
1599 transistor
100OHM
MITSUBISHI RF POWER MOS FET
TRANSISTOR D 1785
transistor D 1666
transistor 38W 3 pin
|
transistor 636 mitsubishi
Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HUF1
520MHz
RD30HUF1
520MHz
RD30HUF1-101
transistor 636 mitsubishi
rd30
100OHM
RD30HUF1-101
742 mosfet
636 MOSFET TRANSISTOR
transistor 1734
|
100OHM
Abstract: RD30HUF1 IDQ10
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HUF1
520MHz
RD30HUF1
520MHz
100OHM
IDQ10
|
A 1469 mosfet
Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
Pch MOS FET
S 170 MOSFET TRANSISTOR
100OHM
mosfet 800 v
MITSUBISHI RF POWER MOS FET
|
transistor D 1666
Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
transistor D 1666
MITSUBISHI RF POWER MOS FET
RD30HVF1-101
mos 1718
transistor A 564
rf power transistor rd30hvf1
A 1469 mosfet
transistor D 1762
1633 MOSFET
|
Mitsubishi transistor C 1588
Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HUF1
520MHz
RD30HUF1
520MHz
Mitsubishi transistor C 1588
S 170 MOSFET TRANSISTOR
RF Transistor s-parameter 30W
|
2N7081
Abstract: No abstract text available
Text: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
|
Original
|
PDF
|
2N7081
O257AB
P36736Rev.
2N7081
|
transistor 38W
Abstract: stk401 MG-200 STK400 STK400-200 STK401-270
Text: Ordering number:ENN*5384 Thick Film Hybrid IC STK401-270 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Ω output load impedances. It is fully pin
|
Original
|
PDF
|
STK401-270
STK401-270
STK400
STK401-
STK401-270]
STK400-
transistor 38W
stk401
MG-200
STK400-200
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4680B Thick Film Hybrid IC STK401-060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simply by
|
Original
|
PDF
|
4680B
STK401-060
STK401-060
|
STK400-500
Abstract: No abstract text available
Text: Ordering number:ENN*5384 Thick Film Hybrid IC STK401-270 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Ω output load impedances. It is fully pin
|
Original
|
PDF
|
STK401-270
STK401-270
STK400
STK401-
STK401-270]
STK400-
STK400-500
|
45W Audio amplifier
Abstract: stk*400-050 STK401-060 100w audio amplifier circuit diagram per channel transistor 38W 100W audio amplifier diagram 4680b
Text: Ordering number: EN 4680B Thick Film Hybrid IC STK401-060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compatible. This allows a single PCB design to be used to construct amplifiers of various output capacity simply by
|
Original
|
PDF
|
4680B
STK401-060
STK401-060
45W Audio amplifier
stk*400-050
100w audio amplifier circuit diagram per channel
transistor 38W
100W audio amplifier diagram
4680b
|
|
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3
|
Original
|
PDF
|
RD30HUF1
520MHz
RD30HUF1
520MHz
RD30HUF1-101
|
MITSUBISHI RF POWER MOS FET
Abstract: 071J
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
|
Original
|
PDF
|
RD30HVF1
175MHz
RD30HVF1
RD30HVF1-101
Oct2011
MITSUBISHI RF POWER MOS FET
071J
|
68w transistor
Abstract: transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 lm3886 output circuit LM388
Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from
|
Original
|
PDF
|
LM3886
20kHz.
LM3886,
AN-898:
5-Aug-2002]
68w transistor
transistor 68W
LM3886 Overture Audio Power Amplifier Series
trouble shorting top switch 249
LM3886 circuit diagram
lm3886 output circuit
LM388
|
STK404-100S
Abstract: STK404-130S 150w audio amplifier circuit diagram class AB STK404-140S 100w audio amplifier circuit diagram per channel stk404-120s stk*404-070 STK404-140 STK404-000S STK404-070S
Text: Ordering number : EN7733 Thick-Film Hybrid IC STK404-120S One-Channel Class AB Audio Power Amplifier IC 80W Overview The STK404-000S series products are audio power amplifier hybrid ICs that consist of optimally-designed discrete component power amplifier circuits that have been miniaturized using SANYO’s unique insulated metal substrate
|
Original
|
PDF
|
EN7733
STK404-120S
STK404-000S
STK404-100S
STK404-130S
150w audio amplifier circuit diagram class AB
STK404-140S
100w audio amplifier circuit diagram per channel
stk404-120s
stk*404-070
STK404-140
STK404-070S
|
RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
100OHM
RD30HVF1-101
rd30hvf
A 1469 mosfet
|
212J
Abstract: rd30hvf
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
PDF
|
RD30HVF1
RD30HVF1
175MHz
RD30HVF1-101
212J
rd30hvf
|
SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
|
OCR Scan
|
PDF
|
BLF244
711002b
OT123
7110fi5b
T-39-11
SOT123 Package
SOT123
BLF244
International Power Sources
SOT-123
|
80w audio amplifier circuit using stk IC
Abstract: stk 490 310
Text: Ordering number : EN *5384 _ Thick Film Hybrid 1C _ STK401 -270 AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Preliminary Overview Package Dimensions The STK401-270 is a 2-channel audio power amplifier IC
|
OCR Scan
|
PDF
|
STK401
STK401-270
STK400-X00
STK401-X00
STK401-270]
STK401-270
80w audio amplifier circuit using stk IC
stk 490 310
|
80w hf audio power amplifier
Abstract: MG-200 STK400-200 STK401-270
Text: Ordering number: EN äs 5384 Thick Film Hybrid 1C STK401-270 No. * 5384 SAÍK.YO i 2ch A F Power Amplifier Split Power Supply 40W + 40W,THD = 0.08% P relim inary O verview Package D im ensions The STK401-270 is a 2-channel audio power amplifier IC that supports 6/3Q output load impedances. It is fully pin
|
OCR Scan
|
PDF
|
STK401-270
STK401-270
STK400-X00
STK401-X00
80w hf audio power amplifier
MG-200
STK400-200
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4680B Thick Film Hybrid 1C STK401 -060 AF Power Amplifier Split Power Supply (35W + 35W min, THD = 0.4%) Overview Package Dimensions The STK401-060 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compati
|
OCR Scan
|
PDF
|
4680B
STK401
STK401-060
STK401-060
|
