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    TRANSISTOR 3BS Search Results

    TRANSISTOR 3BS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3BS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3BS transistor

    Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		PDF BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    MARKING 3FS

    Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A

    3BS transistor

    Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		PDF BC856T BC856AT BC856BT VPS05996 EHP00381 EHP00380 Jan-08-2002 EHP00382 EHP00379 3BS transistor transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data

    3BS transistor

    Abstract: No abstract text available
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		PDF BC856T VPS05996 BC856AT BC856BT 3BS transistor

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    transistor packing code 3f

    Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 transistor packing code 3f marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A

    top marking 1B sot23

    Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23

    3BS transistor

    Abstract: S0642
    Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER


    OCR Scan     		PDF S0692 OT-23 SC06960 S0642 OT-23 3BS transistor S0642

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    BD722

    Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and


    OCR Scan     		PDF BD720 BD722 BD724 BD726 BD440. BD719; BD724. bd722 B0719 BD440 BD719 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC

    AT-60585

    Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
    Text: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz


    OCR Scan     		PDF 44475A4 AT-60585 AT-60585 AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor

    BU508A

    Abstract: BU508D philips bu508a BY223 diode BY223 transistor BU508D bu50ba BY22B BU508D transistor transistor AS 431
    Text: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode.


    OCR Scan     		PDF BU508A; BU508D OT93A BU508D BU508D) 711002b BU508A philips bu508a BY223 diode BY223 transistor BU508D bu50ba BY22B BU508D transistor transistor AS 431

    Untitled

    Abstract: No abstract text available
    Text: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V


    OCR Scan     		PDF IRG4PC40K O-247AC 002S112

    Untitled

    Abstract: No abstract text available
    Text: ^ Philips Components Data sheet status Prelim inary specification date of issue March 1991 P H I L IP S N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK474-500B 7110fi2b -SOT186A

    TLP1240

    Abstract: No abstract text available
    Text: INFRARED LED + PHOTO TRANSISTOR TLP1240 C5 (TLP1240(C 5)> COPIER, PAGE PRINTIR, FACSIMILE FAN-HEATER, AIR CONDITIONER TERMINAL EQUIPMENT IN BANKING FACILITIES GAME MACHINE TLP1240 (C5) is a compact photo in te rru p ter w ith attached connector which uses a hig h -rad ian t


    OCR Scan     		PDF TLP1240 TLP1240

    TTPC

    Abstract: BUK474-500B rm3 transistor BUK474
    Text: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies


    OCR Scan     		PDF BUK474-500B 7110fl2b -SOT186A 711Dfl2b 0D44b23 TTPC BUK474-500B rm3 transistor BUK474

    3BS transistor

    Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
    Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F 711002b 0043G52 OT186 BD934F, BD936F, 3BS transistor BD937F b0933 935F BD935 d941 BD933F BD934F

    2SC509

    Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
    Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±


    OCR Scan     		PDF 2SC509 RH-16 2sa509 -30-SO 00X10Oxlmm 2SC509 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology

    transistor BD939F

    Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
    Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F Q0M3052 OT186 BD934F, BD936F, BD938F, transistor BD939F d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F

    2SB1628

    Abstract: No abstract text available
    Text: = r-5 > • S / - h y ' J a > h 7 > y X ^ Silicon Transistor 2 S 1 B 6 2 8 P N P X fcf£ 3r V 2SB16 2 8 ? M ' *'* e>* 1 / ; ^ * : £ ^ fl-JfclS ÜM£ : mm U T -fe U , DC / DC =l > • K 7 < A - 4 '^ ( r S S T 'T c , 1.5±0.1 n AM +0 .0 3 U . 4 1 - 0 .0 5


    OCR Scan     		PDF 2SB1628 2SB1628 IEI-620)

    7423PC

    Abstract: 00k3
    Text: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE


    OCR Scan     		PDF 7423P 5423D 7423FC 5423FM 7423PC 00k3

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.


    OCR Scan     		PDF EN4188 G01G1SD LB1855M LB18S5M DG10154

    3BS transistor

    Abstract: No abstract text available
    Text: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from


    OCR Scan     		PDF 200mA fl23SbOÂ 023SbDS 0235b05 3BS transistor