TRANSISTOR 3TY Search Results
TRANSISTOR 3TY Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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TRANSISTOR 3TY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the |
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Transistor Equivalent list
Abstract: FMBT3904W 1N916 8 open colector output oc 140 npn transistor
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FMBT3904W MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 Transistor Equivalent list FMBT3904W 1N916 8 open colector output oc 140 npn transistor | |
MARKING CODE 20Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2 |
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FMBT2907AW 150mW 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs MARKING CODE 20 | |
125OC
Abstract: FMBT2222 FMBT2222A
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FMBT2222AW MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMBT2222 FMBT2222A | |
marking code 37uContextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907AW List List. 1 Package outline. 2 |
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FMBT2907AW MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 marking code 37u | |
231-112Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2 |
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FMBT2907 FMBT2907A 120sec 260sec 30sec DS-231112 231-112 | |
FMBT2222A
Abstract: fmbt2222 125OC 1N914
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FMBT2222 FMBT2222A MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC FMBT2222A 1N914 | |
FMBT2907
Abstract: FMBT2907A FMBT2222 FMBT2222A
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FMBT2907 FMBT2907A MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC FMBT2907A FMBT2222 FMBT2222A | |
Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2 |
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FMBT2907 FMBT2907A 120sec 260sec 30sec DS-231112 | |
2SC5124Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) |
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2SC5124 Pulse20) 100mA 2SC5124 | |
2SC5124Contextual Info: 2SC5124 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) |
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2SC5124 Pulse20) 100mA 2SC5124 | |
TO-126LPContextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle |
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Transistor 2TY
Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
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CNX21 74bbflSl cut-of1986 OT212. 0DD4fl03 MSA048-2 Transistor 2TY PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor | |
2SC3520Contextual Info: SANKEN ELECTRIC CO LTP 55E ]> 7 ^ 0 7 4 1 O O G m s a 114 ISAKJ Silicon NPN Triple Diffused Planar ☆ High Voltage Switching Transistor 2SC3520 Application Example : • Outline Drawing 2 ••• -M T-100 T03P Switching Regulator and General Purpose Electrical Characteristics |
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2SC3520 T-100 10Omax 400mm 10min 2SC3520 | |
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NEC varistor
Abstract: 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220
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1S1209 1S1212 VD1120~ VD1223 NEC varistor 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220 | |
equivalent transistor K 3531
Abstract: k 3531 transistor transistor K 3531 b 514 transistor TA7686 406MHZ rca 632 class c tuned amplifier rca rf overlay transistor 40893
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470-MHz 512-MHz RCA-40893* over095 equivalent transistor K 3531 k 3531 transistor transistor K 3531 b 514 transistor TA7686 406MHZ rca 632 class c tuned amplifier rca rf overlay transistor 40893 | |
LZ2324AKContextual Info: LZ2324AK LZ2324AK 1/, type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION li!2324AK is a 1 /3tyw 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximatelyOB90pixels (horizontal 542 Xvertical |
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LZ2324AK LZ2324AK 2324AK approximatelyOB90pixels 16-PIN | |
CNR50
Abstract: TDA8385 B5415 BS415 BS7002 .2ty transistor
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CNR50 TDA8385 B5415 BS415 BS7002 .2ty transistor | |
Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING |
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QID4515001 Amperes/4500 00A/s 100nH 180nH | |
Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING |
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QID4515001 Amperes/4500 180nH 100nH | |
QID4515001Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING |
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QID4515001 Amperes/4500 180nH 100nH QID4515001 | |
QID4515001
Abstract: TH 1287
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QID4515001 Amperes/4500 180nH 100nH QID4515001 TH 1287 | |
transistor k 975Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING |
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QID4515001 Amperes/4500 180nH 100nH transistor k 975 | |
Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) |
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QID4515001 Amperes/4500 180nH 100nH |