TRANSISTOR 422 FET Search Results

Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

D1414

Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

d1414

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

D1414

Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE,NP88N055DHE,NP88N055EHE,NP88N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

88N055

Abstract: NEC 88n055 NP88N055MHE NP88N055NHE NP88N055MHE-S18-AY
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP88N055MHE,NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION

D1414

Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

DVD020S

Abstract: arco 462 capacitor rf power 88-108mhz 88-108MHz arco 462 TRIMMER capacitor Arco 422
Contextual Info: _S64 220 5 M / A - C O M P H I INC_ DVD020S ~&5 85D 00478 ÏF | s b 4 E S D S Q T' // OOOCmTû 2 1~~ 100V Power FET 175MHz 80-120V 20W 10dB FEATURES • ■ ■ ■ ■ ■ ■ ■ Package T y p e S 20:1 VSWR No Thermal Runaway Broadband Capability

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

D1414

Abstract: NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

VMP4

Abstract: siliconix vmp4 Transistor VMP4 DVD150T DV28120T DV2840 DV2880T dv2880 DV2810W DV2805W
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

DV28120T

Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Contextual Info: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E

R713

Abstract: transistor 422 fet
Contextual Info: KSR2010 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R«l0kfl) • Complement to KSR1010 ABSOLUTE MAXIMUM RATINGS (TA=>25'C) C haracteristic

GaAs FET HEMT Chips

Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

fujitsu hemt

Abstract: FHX35X rm 702 627
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended

NE334S01

Abstract: transistor C 2240 K 1358 fet transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

DV2840S

Abstract: 0Q004
Contextual Info: 5642205 M/A-COM P H I DV2840S INC ^ 85D 00450 SL422DS □G0045Q D 3 * - / '4 2 N-Channel Enhancement - Mode RF Power FETs 175 MHz 2 0 -3 5 V 40 W 10 dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package Type S FEATURES • 20:1 VSWR ■ No Thermal Runaway

d1507

Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote

SJ 2252 CIRCUIT DIAGRAM

Abstract: itt zf 10 zener 22-16 R9 itt zf 12 zener TMP47C422U TMP47C422F TMP47C222U Zener diode ITT zf 2.7
Contextual Info: TO SH IB A TMP47C222/422 CMOS 4-Bit Microcontroller TM P47C222N, TMP47C422N TMP47C222F, TMP47C422F TMP47C222U, TMP47C422U The TMP47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating AD converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.

47c422

Abstract: TMP47C222N TMP47C422F TMP47C422N o0P07 op07 oscillator tLCS-470 TMP47C222F TMP47P422VF TMP47P422VN
Contextual Info: TOSHIBA TMP47C222/422 CMOS 4-BIT MICROCONTROLLER TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.

22-16 R9

Abstract: TMP47C422F
Contextual Info: TO SHIBA TMP47C222/422 CMOS 4-BIT MICROCONTROLLER TM P47C222N, TMP47C422N TM P47C222F, TM P47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.

47C422N

Contextual Info: TOSHIBA TMP47C222/422 CM OS 4-BIT M ICROCO NTRO LLER TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.