TRANSISTOR 447 CY Search Results

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n

1N3220

Contextual Info: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,

transistor 377

Abstract: BD376 BD375 bd379
Contextual Info: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Symbol Characteristic Collector Base Voltage : BD375 Rating V V V ceo 100 45

UC3843 step down converter

Abstract: UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 6 http://onsemi.com 7 ON Semiconductor Switching Controllers Selection Tables AC−DC/Isolated Switching PFC/PWM Combo Page 14 Power Factor Correction (Page 15) Flyback (Low Power) Forward (Low Power) Half−Bridge

pin configuration of ic TL084

Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Contextual Info: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505

Contextual Info: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit -5 0 -7 5 - 100 -4 5 -6 0 -8 0 V V l C ollector Base Voltage

sgsp230

Contextual Info: n Z J SGS THOM SON SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 VDss 450 V ^D S on 3 Í2 Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT > 100KHz

Contextual Info: rz7 SGS-THOMSON * JÆ . M ffi iLi gïïM O (êS SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on SGSP230 450 V 3 n Id 2.5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION

Contextual Info: FMBA14 FMBA14 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .1N Dot denotes pin #1 NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

2N3694

Abstract: 2N3693 MPS3694 SILICON SMALL-SIGNAL DICE SILICON DICE motorola mps3693
Contextual Info: MOTOROLA SC {DIODES/ OP TO } 6 3 6 7 2 5 ^ _ MOTOROLA ~34 SC »F|b3t,7SSS 003fi01t, t> | ~ <D f O D E S / O P T O 34C 38016 SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSC3694 DIE NO. — NPN LINE SOURCE — DEL235 This die provides performance similar to that of the following device types:

Contextual Info: SOT23 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FMMT555 IS S U E 3 - J A N U A R Y 1996 FEATURES * 150 Volt V,CEO * 1 A m p continuous current C O M P L E M E N T A R Y TY PE - FM M T455 P A R T M A R K IN G D E T A IL - 555 ABSOLUTE MAXIMUM RATINGS. PARAMETER

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS

D 1398 Transistor

Abstract: k 1398 Transistor
Contextual Info: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC—F005.DWG REV DOC. NO. S PC -F005 DESCRIPTION DRAWN DATE / / Effective: 7 / 8 / 0 2

Contextual Info: SGS-THOMSON BUV27 FAST NPN SWITCHING TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-O FF AND TURN-ON D E S C R IP T IO N High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators m otor control.

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in