TRANSISTOR 5 AMP 700 VOLT Search Results

BU208A

Contextual Info: Silicon Power Transistor BU208A Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of televisions. Specification Fetaures : F Horizontal Deflection NPN Silicon Power Transistor F 5 Amp / 700 V device in TO-204AA [ TO-3 ] package

Contextual Info: SOT23 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW tf ts ns µS 900 tr 0.4 7 tf ns 500 400 6 IB1=IB2=IC/10 VCE=10V 700 IC/IB=10 PARTMARKING DETAIL – 5 tr 300 E C

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

equivalent mje13005

Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

je13003

Abstract: je13003 TRANSISTOR JE13002 transistor JE13003 transistor JE 1090 mje1300 MJE13003 motorola mje13 MJE-13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003* D esigner's Data Sheet •Motoroi» PraMrrad Unie* SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high-voltage, high-speed power switching

MJE1300S

Abstract: JE13005
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13005* Designer’s Data Sheet ‘Motorola Pr»f*rr*d Dcvie« SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

JE13009

Contextual Info: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet ‘ Motorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs The MJE13009 is designed for high-voltage, high-speed power switching inductive

JE13009

Abstract: transistor MJE13009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet motorola Prtforrod Davie« S W IT C H M O D E Se rie s N PN Silicon Power Transistors The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Contextual Info: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25

AV13005

Contextual Info: @vic AV13005 TO-220 NPN SILICON POWER TRANSISTOR AV13005 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 4.0 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

cfl low loss drive

Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Contextual Info: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

13003 TRANSISTOR equivalent

Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Contextual Info: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS

2N5879

Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
Contextual Info: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —

mje13003 equivalent

Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905
Contextual Info: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

mje 3007

Abstract: l3007 I3007 je13007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt
Contextual Info: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCH MODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching

JD13003

Contextual Info: MOTOROLA SC XSTRS/R F 1 2 E D I b 3 b 7 2 5 4 G G ô S 2 tn 1 | T-33-Ö7 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MJD13003 Designer's Data Sheet High V o lta g e S w itc h m o d e S e rie s D PA K For Surface Mount A pplications This device is designed for high-voltage, high-speed power switching inductive circuits

2N6031 MOTOROLA

Abstract: 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030
Contextual Info: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

transistor Amp 3055

Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@