TRANSISTOR 500MHZ Search Results

Contextual Info: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver

NTE346

Abstract: npn 1W 40V to39
Contextual Info: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver

IRL19

Contextual Info: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an

BFR91

Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
Contextual Info: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and

transistor B 764

Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
Contextual Info: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

pHEMT transistor 360

Abstract: powerband
Contextual Info: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across

RF POWER TRANSISTOR

Abstract: T1P3002028-SP transistor jc 817
Contextual Info: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across

transistor B 764

Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

transistor 746

Contextual Info: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across

pHEMT transistor 360

Abstract: "RF Power Transistor" T1P3005028-SP
Contextual Info: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across

transistor ZO 103 MA

Abstract: zo 103 ma ZO 103 BPT25C01 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor
Contextual Info: BIPOLARICS, INC. Part Number BPT25C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT25C01 is a high performance silicon bipolar transistor intended for use in

zo 103 ma

Abstract: transistor ZO 103 MA transistor ZO 103 ZO 103 BPT24C01 TRANSISTOR L 043 A
Contextual Info: BIPOLARICS, INC. Part Number BPT24C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT24C01 is a high performance silicon bipolar transistor intended for use in

transistor ZO 103 MA

Abstract: zo 103 ma BPT23C01 ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ
Contextual Info: BIPOLARICS, INC. Part Number BPT23C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C01 is a high performance silicon bipolar transistor intended for use in

BPT23C02

Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
Contextual Info: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in

SOT-23 AAAA

Abstract: 276-116 BFQ67W BFQ67 BFQ67R SOT-23 marking 717 SOT-23 AAAA transistor
Contextual Info: BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

2N918 semelab

Contextual Info: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

CMPT918

Contextual Info: Central Central TMTM CMPT918 SemiconductorCorp. Corp. Semiconductor NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

INTERSIL AN5296

Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
Contextual Info: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

2n918 transistor SOT23

Abstract: 2N918 2N918CSM
Contextual Info: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

an5296

Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
Contextual Info: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

7500 IC 14 PIN

Abstract: 14 IC ic 7500
Contextual Info: 2N2857.02SML MECHANICAL DATA Dimensions in mm inches NPN RF SMALL SIGNAL TRANSISTOR 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON NPN TRANSISTOR APPLICATIONS:

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

BFR92A

Abstract: bfr92
Contextual Info: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available

transistor 495

Abstract: 2N2857
Contextual Info: 2N2857 MECHANICAL DATA Dimensions in mm inches NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • SILICON NPN TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. APPLICATIONS: • AMPLIFIER, OSCILLATOR AND