TRANSISTOR 557 B Search Results

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC559CTA

Abstract: bc560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor BC 458

Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2SB1557

Abstract: 2SD2386
Contextual Info: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

BLV38

Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .

Contextual Info: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage

TRANSISTOR C 557 B

Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
Contextual Info: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage

APPLICATION OF BC548 transistor

Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃

bc556

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance

JANTX2N6796

Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
Contextual Info: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

Contextual Info: PD - 9.1718A International IO R Rectifier IRFE330 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U HEXFET TRANSISTOR JANTXV2N6800U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 400Volt, 1.0ft, HEXFET The leadless chip carrier LCC package represents

operation of BC557 TRANSISTOR

Abstract: TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 „ ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B

Contextual Info: Provisional Data Sheet No. PD - 9.1666 International I R Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL Product Summary 100Volt,0.18£2, HEXFET T h e leadless chip carrier LC C package represents

Contextual Info: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents

Contextual Info: Provisional Data Sheet No. PD - 9.1715 International IS R Rectifier IRFE230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:M IL-PRF-19500/557] N -C H A N N E L 200Volt, 0.40Q, HEXFET Product Summary The leadless chip carrier LCC package represents

7C2 diode

Contextual Info: • 7^537 DDHbiaO 557 ■ S G T H _ f Z T SGS-THOMSON Ä 7# STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N60XI Vdss RDS on 600 V < Id a 2 .5 2.4 A ■ TYPIC AL FtDS(on) = 2 0. m AVALANC HE RUGGED TECH NO LO G Y ■ 100% AVALANC HE TESTED

BC557

Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
Contextual Info: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C

Contextual Info: Provisional Data Sheet No. PD - 9.1666A International IOR Rectifier irfei3o JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D N -C H A N NE L Product Summary 100Volt, 0.18 ii, HEXFET