TRANSISTOR 6108 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

LB 122 transistor

Abstract: 2N2222AUA
Contextual Info: 61084 ms- 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed

Contextual Info: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry

Contextual Info: MS- 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61083 OPTOELECTRONIC PRODUCTS DIVISION Features — Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available PIN 1 IDENTIFIER

Contextual Info: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package

2N2222AUA

Abstract: "PNP Transistor"
Contextual Info: 61084 Mii SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (2N2222AUA) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package

transistor 45 f 122

Contextual Info: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available

2N2907AUB

Contextual Info: jim»- 2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61089 Features OPTOELECTRONIC PRODUCTS DIVISION ORIENTATION KEY Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged

transistor 45 f 122

Abstract: 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8
Contextual Info: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available

Contextual Info: 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed

Contextual Info: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available

2N2907AUB

Abstract: optoelectronic ic "PNP Transistor"
Contextual Info: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

VQ1001

Contextual Info: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7

CEF10N4

Contextual Info: CEF10N4 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 450V ,5.6A ,RDS ON = 700m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

smp30n10

Contextual Info: Tem ic S ilicon * _ SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( S ) I d (A) 100 0.060 30 TO-220AB O DRAIN connected to TAB G D S Top View N-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

transistor tt 2247

Contextual Info: AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T fw l HEWLETT A"KM PACKARD Features • • • • • 85 Plastic Package Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.9 dB typical at 2.0 GHz High Associated Gain: 16.5 dB typical at 1.0 GHz

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

f25n06l

Abstract: transistor marking rip RFP25N06L F25N06 transistor l 2
Contextual Info: RFP25N06L {£} H A R R IS August 1991 N-Channel Logic Level Enhancem ent-M ode Power Field-Effect Transistor L2 FET F e a tu re s • Package TO-220AB TOP VIEW 25A , 60 V • rDS(ON) = 0.085f2 DRAIN (FLANGE) • Design O p tim ized for 5V G ate Drives u

transistor tic 106 N

Contextual Info: • n *1302571 * » 00547^7 4T0 ■ « August 1991 HAS R F P 2 5 N 6 L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistor L2FET Features Package • 25A, 60V • rDS(ON) = 0 .0 8 5 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits